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Charge pump power supply and boost method compatible with ddr1, ddr2 and ddr3

A technology of charge pump and power supply, which is applied in the direction of electrical components, output power conversion devices, and conversion equipment without intermediate conversion to AC. It can solve the problems of small current drive capability, multiple power supply currents, and poor conversion efficiency. Achieve optimal The effect of conversion efficiency

Active Publication Date: 2018-08-10
XI AN UNIIC SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But in other modes (such as DDR1 or DDR3), the existing charge pump will show poor conversion efficiency, large or small current drive capability
[0006] Poor conversion efficiency will consume more power supply current, which will increase the power consumption of the chip; a small current drive capability will make the charge pump unable to reach the required high voltage level; a large current drive capability will Will cause a large ripple on the output voltage of the charge pump

Method used

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  • Charge pump power supply and boost method compatible with ddr1, ddr2 and ddr3
  • Charge pump power supply and boost method compatible with ddr1, ddr2 and ddr3
  • Charge pump power supply and boost method compatible with ddr1, ddr2 and ddr3

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Embodiment Construction

[0035] see Figure 2 to Figure 5 As shown, a charge pump power supply compatible with DDR1, DDR2 and DDR3 of the present invention adds a power supply monitoring circuit and a logic control circuit on the basis of the existing charge pump circuit, automatically distinguishes the mode in which it is located, and according to the different modes in which it is located To configure the appropriate charge pump stages and number.

[0036] see figure 2 As shown, the present invention is a charge pump power supply compatible with DDR1, DDR2 and DDR3, including: a first charge pump pump1, a second charge pump pump2, a third charge pump pump3, a power supply monitoring circuit and a logic control circuit.

[0037]The first charge pump pump1 , the second charge pump pump2 and the third charge pump pump3 are used to convert the power supply voltage vext to a high voltage. The high voltage here refers to a target voltage greater than vext.

[0038] Power supply monitoring circuit: use...

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PUM

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Abstract

The invention discloses a charge pump power supply compatible with DDR1, DDR2 and DDR3 and a boosting method. The charge pump power supply includes: several charge pumps, power supply monitoring circuits and logic control circuits; the several charge pumps are used to realize the input power vext to the target High-voltage conversion; the power monitoring circuit is used to monitor the level of the power supply voltage; the logic control circuit is used to generate corresponding enable signals according to the output results of the power monitoring circuit to control the work of several charge pumps, and input The power vext is boosted to the target high voltage. The invention can be compatible with DDR1, DDR2 and DDR3 at the same time, and has good conversion efficiency and suitable current driving ability under DDR1, DDR2 and DDR3.

Description

【Technical field】 [0001] The invention relates to the technical field of charge pumps, in particular to a charge pump power supply compatible with DDR1, DDR2 and DDR3 and a voltage boosting method. 【Background technique】 [0002] Charge pumps are widely used in DRAM chips to obtain an internal operating voltage vpp higher than the power supply voltage. Based on different processes, the voltage value of vpp is slightly different, but it is usually around 2.7V to 2.85V. [0003] In different working modes, the power supply voltage of DRAM is different. The power supply voltage of DDR1 is 2.5V, the power supply voltage of DDR2 is 1.8V, and the power supply voltage of DDR3 is 1.5V. [0004] Existing charge pumps for DRAM chips usually consist of two-stage sub-charge pumps, as shown in the attached figure 1 shown. The structure of the two-stage sub-charge pumps is exactly the same, the power supply voltage is used as the input of the first-stage sub-charge pump, the output ou...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H02M3/07
CPCH02M3/07H02M3/077
Inventor 梁星
Owner XI AN UNIIC SEMICON CO LTD