A high-insulation bismuth ferrite-based high-temperature piezoelectric glass-ceramic composite material and its preparation method
A high-temperature piezoelectric and glass-ceramic technology, which is applied in the field of high-insulation bismuth ferrite-based high-temperature piezoelectric glass-ceramic composite materials and its preparation, can solve the problems of unreported BFO glass-ceramic preparation methods, piezoelectric performance cannot be reflected, Solve problems such as low electrical polarization strength, achieve high mechanical quality factor, high density, and good high temperature stability
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Embodiment 1
[0022] The composition is: BiFeO 3 + x (20Bi 2 o 3 -30SiO 2 -30CaO-20ZrO 2 )+0.02Sc 2 o 3 ,in x =0.10.
[0023] The preparation method comprises the following steps:
[0024] To analyze pure Bi 2 o 3 , Fe 2 o 3 、Sc 2 o 3 , CaCO 3 , SiO 2 , ZrO 2 and TiO 2 As raw material, according to the following chemical formula BiFeO 3 + x (20Bi 2 o 3 -30SiO 2 -30CaO-20ZrO 2 )+0.02Sc 2 o 3 ( x =0.10) for batching, wet grinding with absolute ethanol as the medium for 24 hours, and drying.
[0025] After drying, heat it in a crucible at 1020°C for 2 hours to form a uniform glass liquid, which is rapidly cryogenically cooled, and then processed into thin slices with a thickness of about 1.0mm.
[0026] The prepared sheet was heated to 500°C at a heating rate of 1°C / min and incubated for 24 hours to nucleate, then raised to 760°C at a heating rate of 1°C / min and kept at 72 hours for crystallization, and slowly cooled to 650°C. °C for 42 hours, take out and cool q...
Embodiment 2
[0030] The composition is: BiFeO 3 + x (20Bi 2 o 3 -30SiO 2 -30CaO-20ZrO 2 )+0.02Sc 2 o 3 ,in x =0.15.
[0031] The preparation method is the same as in Example 1, except that the glass melting temperature is 950°C, the nucleation temperature is 480°C, the crystallization temperature is 730°C, and the polarization electric field is 18kV / mm.
[0032] The performance is shown in Table 1.
Embodiment 3
[0034] The composition is: BiFeO 3 + x (20Bi 2 o 3 -30SiO 2 -30CaO-20ZrO 2 )+0.02Sc 2 o 3 ,in x =0.05.
[0035] The preparation method is the same as in Example 1, except that the glass melting temperature is 1100°C, the nucleation temperature is 580°C, the crystallization temperature is 820°C, and the polarization electric field is 12kV / mm.
[0036] The performance is shown in Table 1.
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