Unlock instant, AI-driven research and patent intelligence for your innovation.

A high-insulation bismuth ferrite-based high-temperature piezoelectric glass-ceramic composite material and its preparation method

A high-temperature piezoelectric and glass-ceramic technology, which is applied in the field of high-insulation bismuth ferrite-based high-temperature piezoelectric glass-ceramic composite materials and its preparation, can solve the problems of unreported BFO glass-ceramic preparation methods, piezoelectric performance cannot be reflected, Solve problems such as low electrical polarization strength, achieve high mechanical quality factor, high density, and good high temperature stability

Active Publication Date: 2018-01-12
GUILIN UNIV OF ELECTRONIC TECH
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, at present, there are still many problems in BFO-based lead-free piezoelectric ceramic materials: such as ceramic materials are difficult to sinter, poor insulation, large leakage current, low electrical polarization strength, and piezoelectric performance cannot be reflected, thus limiting its application.
[0004] But, also do not see the report of BFO glass-ceramic and preparation method thereof at present
The main difficulty lies in the selection of glass system and the control of nucleation and crystallization, which makes it difficult to control the glass forming ability, grain size, shape and content of BFO.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] The composition is: BiFeO 3 + x (20Bi 2 o 3 -30SiO 2 -30CaO-20ZrO 2 )+0.02Sc 2 o 3 ,in x =0.10.

[0023] The preparation method comprises the following steps:

[0024] To analyze pure Bi 2 o 3 , Fe 2 o 3 、Sc 2 o 3 , CaCO 3 , SiO 2 , ZrO 2 and TiO 2 As raw material, according to the following chemical formula BiFeO 3 + x (20Bi 2 o 3 -30SiO 2 -30CaO-20ZrO 2 )+0.02Sc 2 o 3 ( x =0.10) for batching, wet grinding with absolute ethanol as the medium for 24 hours, and drying.

[0025] After drying, heat it in a crucible at 1020°C for 2 hours to form a uniform glass liquid, which is rapidly cryogenically cooled, and then processed into thin slices with a thickness of about 1.0mm.

[0026] The prepared sheet was heated to 500°C at a heating rate of 1°C / min and incubated for 24 hours to nucleate, then raised to 760°C at a heating rate of 1°C / min and kept at 72 hours for crystallization, and slowly cooled to 650°C. °C for 42 hours, take out and cool q...

Embodiment 2

[0030] The composition is: BiFeO 3 + x (20Bi 2 o 3 -30SiO 2 -30CaO-20ZrO 2 )+0.02Sc 2 o 3 ,in x =0.15.

[0031] The preparation method is the same as in Example 1, except that the glass melting temperature is 950°C, the nucleation temperature is 480°C, the crystallization temperature is 730°C, and the polarization electric field is 18kV / mm.

[0032] The performance is shown in Table 1.

Embodiment 3

[0034] The composition is: BiFeO 3 + x (20Bi 2 o 3 -30SiO 2 -30CaO-20ZrO 2 )+0.02Sc 2 o 3 ,in x =0.05.

[0035] The preparation method is the same as in Example 1, except that the glass melting temperature is 1100°C, the nucleation temperature is 580°C, the crystallization temperature is 820°C, and the polarization electric field is 12kV / mm.

[0036] The performance is shown in Table 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a high-insulation bismuth ferrite-based high-temperature piezoelectric glass-ceramic composite material and a preparation method thereof. 30SiO2‑25CaO‑10ZrO2) +0.05Sc2O3 to represent, where x represents the mole fraction, 0 <x<0.2。本发明采用在玻璃中形核结晶制备玻璃陶瓷复合材料技术,即可控制微观结构,又获得很高的致密度。本发明制备工艺简单、稳定,适合工业推广应用。本发明的玻璃陶瓷组成是一种绿色环保型复合材料,绝缘性高,漏电流低,可在高电场下高温极化,高温压电性能优良,退极化温度td>600°C, the mechanical quality factor is higher than 600, and has a good application prospect in high-temperature piezoelectric sensors.< / x<0.2。本发明采用在玻璃中形核结晶制备玻璃陶瓷复合材料技术,即可控制微观结构,又获得很高的致密度。本发明制备工艺简单、稳定,适合工业推广应用。本发明的玻璃陶瓷组成是一种绿色环保型复合材料,绝缘性高,漏电流低,可在高电场下高温极化,高温压电性能优良,退极化温度td>

Description

technical field [0001] The invention relates to a piezoelectric glass-ceramic material, in particular to a high-insulation bismuth ferrite-based high-temperature piezoelectric glass-ceramic composite material and a preparation method thereof. Background technique [0002] As a functional material that can realize mutual conversion between mechanical energy and electrical energy, especially PZT-based ceramic materials have good piezoelectric and electromechanical coupling properties, so they are widely used in transducers, drives, ultrasonic motors, sensors and other fields. Due to the pollution of lead and the sustainable development of human society, the development of green and environmentally friendly lead-free piezoelectric ceramic materials with high piezoelectric and electromechanical coupling properties has become a research hotspot in recent years. In addition, with the requirements of reliability and noise reduction in vibration and shock measurement in aerospace, m...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/26C04B35/622
Inventor 周昌荣曾卫东杨玲陈国华袁昌来杨华斌周沁
Owner GUILIN UNIV OF ELECTRONIC TECH