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Formation method of semiconductor structure

A semiconductor and patterning technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of local interconnection process stability to be improved, and achieve the effect of maintaining stable dimensions

Active Publication Date: 2018-11-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the stability of the existing local interconnection process still needs to be improved

Method used

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  • Formation method of semiconductor structure

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Embodiment Construction

[0022] As mentioned in the background technology, the stability of the existing local interconnection process still needs to be improved. For example, in the local interconnection process, the size of the photolithographic pattern fluctuates greatly, such as the size of the same photolithographic pattern in different regions on a wafer. different, or the same lithographic image on different wafers has different dimensions.

[0023] The study found that in the actual production process, due to the limitation of the number of manufacturing process machines and production capacity, after the bottom anti-reflective coating on the metal nitride layer, it usually takes a long time to proceed to the subsequent formation of the photoresist layer. step, in this case the fluctuation of the size of the photolithographic pattern formed is larger. Further studies have found that after the bottom anti-reflective coating on the metal nitride layer, some alkaline substances (such as NH 2 or ...

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Abstract

A forming method of a semiconductor structure includes the steps that a substrate is provided; a metal nitride layer is formed on the substrate; a bottom anti-reflection coating is formed on the metal nitride; a graphical photoresist layer is formed on the bottom anti-reflection coating. The forming method is characterized in that the method further includes the steps that before the graphical photoresist layer is formed, the bottom anti-reflection coating is thermally treated. The method is applied in the local interconnection technology of metal nitride, and the size stability of a formed photo-etched pattern is guaranteed.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] In the manufacturing process of semiconductor devices, photolithography is an important process to transfer the pattern in the mask plate to the photoresist layer. With the continuous reduction of feature size, the difficulty of photolithography is increasing. When defining patterns in the photoresist layer, due to the high reflection coefficient of the semiconductor substrate (including metal layer and dielectric layer) under the photoresist , so that the exposure light source is easy to reflect on the surface of the semiconductor substrate, resulting in deformation or dimensional deviation of the photoresist pattern, resulting in incorrect transfer of the mask pattern. In order to eliminate the reflection of the light source, it is usually necessary to form a A layer of anti-reflective coat...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76864H01L21/76868H01L21/76895H01L2221/1078
Inventor 徐涛陈宏王卉曹子贵陆向宇
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP