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Method for preparing zinc sulfide photoelectric film through zinc oxide

A technology of photoelectric thin film and zinc sulfide, which is applied in the manufacture of circuits, electrical components, and final products, etc., to achieve the effect of low equipment requirements, low production cost, and low-cost large-scale industrial production.

Inactive Publication Date: 2016-04-20
SHANDONG JIANZHU UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0017] In order to solve the existing problems in the preparation of zinc sulfide photoelectric thin films, the present invention has invented a method for preparing zinc sulfide photoelectric thin films with zinc oxide

Method used

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Experimental program
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Embodiment 1

[0027] a. Cleaning of the tin dioxide conductive glass substrate: clean the glass substrate as described above, and the size of the substrate is 20mm×20mm.

[0028] b. Divide 1.0 parts of C 6 h 5 Na 3 o 7 2H 2 O, 2.0 parts of ZnO, 65.0 parts of Na 2 S 2 o 3 ·5H 2 O was placed in 2700.0 parts of distilled water to dissolve the substances in the solution.

[0029] c. Pour the above electrodeposition solution into a three-electrode device, use a saturated calomel electrode as a reference electrode, a platinum electrode as an auxiliary electrode, and tin dioxide conductive glass as a research electrode, and use a transistor potentiostat at a deposition potential of 2V Thin films were deposited at room temperature, and the deposition time was 30 min to obtain precursor thin film samples.

[0030] d. Place the precursor thin film sample on the support, add sublimated sulfur powder into the hydrazine hydrate, the precursor thin film sample is not in contact with the hydrazin...

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Abstract

The invention provides a method for preparing a zinc sulfide photoelectric film through zinc oxide, and belongs to the technical field of preparation of the photoelectric film used for a solar cell. The zinc sulfide photoelectric film is obtained by the following steps that a tin dioxide conductive glass substrate is cleaned firstly; then C<6>H<5>Na<3>O<7>.2H<2>O, ZnO and Na<2>S<2>O3.5H<2>O are put in distilled water; a precursor film is obtained on the conductive glass substrate by an electro-deposition method and naturally dried; the precursor film is put in a tube furnace in which hydrazine hydrate is added so that the precursor film sample is enabled not to be contacted with hydrazine hydrate, sublimed sulfur powder is added in hydrazine hydrate, the sealed tube furnace is heated and thus the precursor film is sulfurated; and finally the sample is taken out to be dried so that the zinc sulfide film is obtained. The high vacuum condition is not required, the requirements for instruments and equipment are low, production cost is low, production efficiency is high and operation is easy. The obtained zinc sulfide film has great continuity and uniformity, and the principal phase is ZnS phase so that low-cost and large-scale industrial production can be realized.

Description

technical field [0001] The invention belongs to the technical field of film preparation for solar cells, and in particular relates to a method for preparing a zinc sulfide photoelectric film by using zinc oxide. Background technique [0002] With the development of society and economy, the total energy consumption in our country has increased sharply, the energy crisis and the pollution caused by traditional energy to the environment are becoming more and more serious. Therefore, the development and utilization of clean and environmentally friendly energy has become a major issue facing mankind. In order to make full use of solar energy, a clean, safe and environmentally friendly renewable resource, the research and development of solar cell materials have been paid more and more attention in recent years. [0003] In thin-film photovoltaic materials, ZnS is a group II-VI compound semiconductor with a zinc blende crystal structure and a direct transition energy band structur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/0296
CPCH01L31/0296H01L31/18Y02P70/50
Inventor 刘科高徐勇许超李静石磊
Owner SHANDONG JIANZHU UNIV