Image sensor with pixel units having interleaved photodiodes

Abstract

The invention relates to an image sensor with pixel units having interleaved photodiodes. The image sensor includes a plurality of photodiodes arranged into an array of rows and columns. The photodiodes are grouped into pixel units, where each pixel unit includes at least four photodiodes and shared pixel unit circuitry coupled to each of the four photodiodes. In one aspect the shared pixel unit circuitry may include a shared source follower transistor. In another aspect the shared pixel unit circuitry includes a shared reset transistor. Two of the photodiodes of the pixel unit are in a first column of the array and another two of the photodiodes are in a second column of the array. One of the photodiodes in the second column is in a row that is between rows of the two photodiodes in the first column.

Description

technical field [0001] This disclosure relates generally to image sensors, and particularly, but not exclusively, to the layout of complementary metal-oxide-semiconductor (CMOS) image sensors. Background technique [0002] Image sensors have become ubiquitous. It is widely used in digital still cameras, cellular phones, security cameras, as well as in medical, automotive and other applications. The technology for fabricating image sensors, and complementary metal-oxide-semiconductor ("CMOS") image sensors in particular, has continued to evolve rapidly. For example, demands for higher resolution and lower power consumption have driven further miniaturization and integration of these image sensors. [0003] Conventional CMOS image sensors typically have a configuration in which multiple pixels are arranged in a two-dimensional array, where each pixel includes a photodiode and an associated pixel transistor. Recently, as image sensors continue to be miniaturized, to reduce t...

AI Technical Summary

Problems solved by technology

However, typical layouts of pixels sharing structures often suffer from leakage problems between the various parts of the pixel transistors due to their close proximity to each other.

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