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Semiconductor device and manufacturing method for semiconductor device

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc.

Active Publication Date: 2018-06-12
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Similarly, in the case where the first joint part and the second joint part are bonded to each other through the intermediate bonding layer, and the second electrode and the second stack part are bonded to each other through the second bonding layer, when the area of ​​the intermediate bonding layer is smaller than the second When the area of ​​the bonding layer is large, EM phenomenon is also likely to occur in the intermediate bonding layer

Method used

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  • Semiconductor device and manufacturing method for semiconductor device
  • Semiconductor device and manufacturing method for semiconductor device
  • Semiconductor device and manufacturing method for semiconductor device

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Experimental program
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Embodiment Construction

[0041] Hereinafter, a first embodiment of the present invention is explained. The semiconductor device 2 of the first embodiment is explained with reference to the drawings. figure 1 A perspective view of the semiconductor device 2 is shown. The semiconductor device 2 is a device in which four power semiconductor elements are molded in a package 9 made of resin. figure 2 A circuit diagram inside the semiconductor device 2 is shown. The semiconductor device 2 has a circuit constructed by two transistors TH, TL and two diodes DH, DL. The two transistors TH, TL and the two diodes DH, DL belong to power semiconductor components. Specifically, each transistor TH, TL and diode DH, DL has an allowable current of 100 amperes or more, and is an element mainly used for power conversion. The semiconductor device 2 is typically used for an inverter that supplies electric power to a traction motor in an electric vehicle, a hybrid vehicle, a fuel cell vehicle, or the like.

[0042] Th...

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PUM

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Abstract

A semiconductor device (2) includes first and second semiconductor elements (3, 5) and first and second conductive members (10, 29). The first electrode (3a) on the first semiconductor element is bonded to the first stack portion (12) of the first conductive member through the first bonding layer (8a). A second electrode (5b) on the second semiconductor element is bonded to the second stack portion (25) of the second conductive member through a second bonding layer (8f). The first joint portion (13) of the first conductive member is bonded to the second joint portion (26) of the second conductive member through an intermediate bonding layer (8g). A first surface of the first joint part facing the second joint part, a side surface of the first joint part continuous with the first surface, a side surface of the second joint part facing the first joint The second surface of the part and the side surface of the second joint part continuous with the second surface are covered with a nickel layer (19a, 19b).

Description

technical field [0001] This specification discloses a semiconductor device and a manufacturing method for the semiconductor device. Background technique [0002] For example, Japanese Patent Application Publication No. 2012-235081 (JP2012-235081A) and Japanese Patent Application Publication No. 2013-016623 (JP2013-016623A) disclose a semiconductor device in which a first electrode electrically connected to a first electrode of a first semiconductor element A conductive member and a second conductive member electrically connected to the second electrode of the second semiconductor element are bonded to each other through the bonding layer. Use solder material etc. for joining. [0003] The first conductive member includes: a first stack portion stacked to the first semiconductor element on the first electrode side; and a first joint portion extending from the first stack portion. The second conductive member includes: a second stack portion stacked to the second semiconduct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/492H01L21/48H01L21/60
CPCH01L24/35H01L24/38H01L24/84H01L2224/35125H01L2224/36H01L2224/8402H01L2924/01028H01L2224/84801H01L23/49562H01L23/3107H01L23/49537H01L23/49575H01L23/49582H01L23/051H01L24/29H01L24/32H01L2224/291H01L2224/29111H01L2224/32245H01L2224/32503H01L2224/32507H01L2224/33181H01L2224/73215H01L2224/83455H01L2224/8381H01L2224/83815H01L2924/181H01L24/33H01L24/83H01L2224/3303H01L2924/13055H01L2224/40245H01L2224/2612H01L2224/0603H01L2924/014H01L2924/00014H01L2924/00012H01L2924/00H01L23/495H01L24/27H01L2224/33505H01L2224/2711H01L2224/2712H01L2224/33517H01L2224/27848
Inventor 门口卓矢
Owner DENSO CORP