A reaction chamber and semiconductor processing equipment

Abstract

The present invention provides a reaction chamber and semiconductor processing equipment. The reaction chamber includes a carrying device, a plasma generating device and a metal plate. Plasma is excited to form, the supporting device is arranged below the plasma generating device; the metal plate is horizontally arranged between the supporting device and the plasma generating device, and a plurality of through holes are provided on the metal plate through its thickness, and the metal plate and The DC power supply is electrically connected to apply a positive voltage to the metal plate to repel ions above the metal plate from diffusing toward the carrying device through the through hole. The reaction chamber provided by the present invention can solve the problem that hydrogen ions easily enter Low-K materials and affect the performance of devices, thereby improving process quality and chip yield.

Description

technical field [0001] The invention belongs to the field of semiconductor equipment manufacturing, and in particular relates to a reaction chamber and semiconductor processing equipment. Background technique [0002] Physical vapor deposition (hereinafter referred to as PVD) equipment usually includes a pre-cleaning chamber in the application of integrated circuit IC, through-silicon via TSV, packaging and packaging, and is used to complete the pre-cleaning process on the substrate or workpiece in the chamber. The basic principle of the so-called pre-cleaning process is to excite a gas (such as argon, helium, hydrogen, etc.) to form a plasma, and then use the plasma to chemically react and / or physically bombard the substrate or workpiece to remove the substrate. Or impurities on the surface of the workpiece. [0003] figure 1 It is a structural schematic diagram of an existing pre-cleaning chamber. see figure 1 , the pre-cleaning chamber 10 includes a carrier device 11 ...

AI Technical Summary

Problems solved by technology

[0005] The present invention aims to solve the technical problems existing in the prior art, and provides a reaction chamber and semiconductor processing equipment. Therefore, under the premise of realizing the pre-cleaning of the surface of the substrate with the help of hydrogen radicals, it can solve the problems of hydrogen ions It is easy to enter the problem that Low-K materials affect the performance of the device, so that the process quality and chip yield can be improved

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