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Preparation method of field ion emitter

A field ion emission and emitter technology is applied in the field of field ion emitter preparation to achieve the effects of improving overall performance, reducing size, and reducing the difficulty of preparation

Inactive Publication Date: 2016-05-25
BEIJING INST OF SPACECRAFT ENVIRONMENT ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the radius of curvature of the tip of this emitter is generally around 10 microns, and it is difficult to further reduce it.

Method used

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  • Preparation method of field ion emitter
  • Preparation method of field ion emitter
  • Preparation method of field ion emitter

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Experimental program
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preparation example Construction

[0024] The basis of the preparation method of the present invention is to firstly obtain a carbon nanotube array sample. The preparation of the carbon nanotube array sample is a mature process at present, so it will not be described in detail here. The carbon nanotube array sample prepared by CVD method can be grown on silicon or metal substrate, and its morphology before preparation can be found in figure 2 .

[0025] The method of the present invention is to coat a layer of low melting point metal indium (In) or gallium (Ga) on the surface of the carbon nanotube array by thermal evaporation or electron beam evaporation or magnetron sputtering, as Field emission emitters.

Embodiment 1

[0026] Embodiment one takes In as the coating material of field emitter

[0027] Put the known carbon nanotube array into the vacuum chamber 2.1, the pressure of the vacuum chamber 2.1 is 1×10 -3 Pa to 1×10 -1 Pa, put the In metal source 2.2 on the heating device 2.3. Vacuumize, and under vacuum conditions, heat the In metal source 2.2 to vaporize it, and evaporate it to the carbon nanotube array to form the coated carbon nanotube array 3, on which the metal layer 3.1 is coated. Use a quartz crystal oscillator balance to measure the coating rate of the In source. By controlling the heating temperature, adjust the coating rate to 0.2nm / s until the thickness reaches 100nm. The radius of curvature of the tip of the carbon nanotube in the carbon nanotube array is basically the same as the diameter of the carbon nanotube. , is about 20nm. The morphology of carbon nanotubes coated with In is as follows: image 3 As shown, the specific preparation process can be found in Figu...

Embodiment 2

[0028] Embodiment two takes Ga as the coating material of field emitter

[0029] Put the known carbon nanotube array into the vacuum chamber 2.1, the pressure of the vacuum chamber 2.1 is 1×10 -3 Pa to 1×10 -1 Pa, put the Ga metal source 2.2 on the heating device 2.3. Vacuumize, and under vacuum conditions, heat the Ga metal source 2.2 to vaporize it, evaporate it to the carbon nanotube array, and form the coated carbon nanotube array 3, on which the metal layer 3.1 is coated. Use a quartz crystal oscillator balance to measure the coating rate of the In source. By controlling the heating temperature, adjust the coating rate to 0.2nm / s until the thickness reaches 100nm. The radius of curvature of the tip of the carbon nanotube in the carbon nanotube array is basically the same as the diameter of the carbon nanotube. , is about 50nm. The morphology of carbon nanotubes after Ga plating is as follows: Figure 4 As shown, the specific preparation process can be found in Fig...

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Abstract

The invention discloses a preparation method of a field ion emitter. The method comprises the step as follows: a low-melting-point metal indium (In) or gallium (Ga) layer coats the surface of a carbon nanotube array through thermal evaporation or electronic beam evaporation and magnetron sputtering methods as an emitter for field emission. The preparation method disclosed by the invention can effectively lower the preparation difficulty of the field ion emitter and reduce the dimension of the emitter, so that the overall performance of the field ion emitter is improved. The emitter is put into a field ion emission test device, and can achieve emission at 1500V voltage; and 3,000V-5,000V voltage is needed for emission by a micron-scale sharp emitter in general.

Description

technical field [0001] The invention belongs to the technical field of spacecraft propulsion, in particular, the invention relates to a preparation method of a field ion emitter. Background technique [0002] The field ion emission phenomenon is a physical phenomenon. Its principle is that under the strong electric field, the liquid metal generates an induced charge on the surface under the action of the electrostatic field; the charge generates an electric field force under the action of the electrostatic field, thereby deforming the metal. Form a "Taylor" tip; when the electrostatic field is large enough, the metal atoms at the "Taylor" tip will be pulled out directly from the metal liquid surface by the electric field force, and form ions, which are emitted to form an ion flow. The field ion emission technology developed by using this physical phenomenon has important applications in the field of dragless satellites such as gravity wave detection satellites and relativity...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J9/02F03H1/00B82Y40/00C23C14/24C23C14/35
CPCH01J9/02B82Y40/00C23C14/24C23C14/35F03H1/00H01J9/025
Inventor 刘宇明张凯李蔓赵春晴刘向鹏
Owner BEIJING INST OF SPACECRAFT ENVIRONMENT ENG