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Storage element and operation method thereof

A technology of storage components and operation methods, applied in the direction of electrical components, information storage, static memory, etc., can solve the problems of charge loss, slow programming, charge increase, etc., and achieve the effect of improving slow programming

Active Publication Date: 2016-06-08
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This phenomenon will cause problems such as slow program, charge loss or charge gain when voltage is applied to the device.

Method used

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  • Storage element and operation method thereof
  • Storage element and operation method thereof
  • Storage element and operation method thereof

Examples

Experimental program
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Embodiment Construction

[0041] Figure 1A It is a schematic top view of the storage device 100a according to an embodiment of the present invention.

[0042] Please refer to Figure 1A , the storage element 100 a includes a substrate 10 and a plurality of groups 101 . The substrate 10 is, for example, a semiconductor substrate, a semiconductor compound substrate or a silicon-on-insulator (SOI) substrate. The substrate 10 may include a single-layer structure or a multi-layer structure. In one embodiment, the substrate 10 is, for example, a silicon substrate. The substrate 10 may include, for example, shallow trench isolation (STI). The group 101 is located on the substrate 10 . The multiple groups 101 can be arranged regularly or irregularly. In one embodiment, the multiple groups 101 are adjacent to each other and do not overlap, but the invention is not limited thereto.

[0043] Each group 101 includes at least one word line 40 and at least one dummy word line 60 . The word line 40 and the dum...

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PUM

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Abstract

The invention discloses a storage element and an operation method thereof. The storage element comprises a substrate, multiple word lines and multiple virtual word lines. The word lines and the virtual word lines are disposed on the substrate. At least one side of each virtual word line is adjacent to the word lines. At least one word line and at least one virtual word line form a group. The operation method of the storage element comprises the following steps: selecting at least one group, and operating the group; applying first bias voltages to the word lines in the group; and applying second bias voltages to the virtual word lines in the group.

Description

technical field [0001] The present invention relates to a semiconductor device and its operating method, and more particularly to a memory device and its operating method. Background technique [0002] Generally speaking, non-volatile memory (non-volatile memory) can perform operations such as storing, reading, and erasing data multiple times, and has the advantage that the stored data will not disappear when the power supply is interrupted. Therefore, non-volatile memory has become a storage element widely used in personal computers and electronic equipment to maintain normal operation of electrical products when they are turned on. [0003] However, with the improvement of the integration level of semiconductor elements, the size of each component in the storage element is also increasingly reduced. For example, when the memory cell size of NAND flash memory shrinks, the critical dimension of the sub-30nm floating gate will also be limited. In order to achieve the goal o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115G11C16/10H10B41/41H10B69/00H10B43/40
Inventor 李亚睿
Owner MACRONIX INT CO LTD