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A nano-heterojunction solar cell based on chalcogenide cuprous compound and its preparation method

A solar cell, cuprous chalcogenide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as hindering the pace of marketization, and achieve the effect of simple and easy preparation process, improved device performance, and easy integration.

Inactive Publication Date: 2017-04-05
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the use of the toxic element Cd has always hindered the marketization of this material system in the field of solar cells. People are trying to find environmentally friendly n-type semiconductor materials to replace CdS as the window layer material of this type of photovoltaic system.

Method used

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  • A nano-heterojunction solar cell based on chalcogenide cuprous compound and its preparation method
  • A nano-heterojunction solar cell based on chalcogenide cuprous compound and its preparation method
  • A nano-heterojunction solar cell based on chalcogenide cuprous compound and its preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0042] see figure 1 , the nano-heterojunction solar cell of the present invention is based on a silicon-based substrate 1 covered with an insulating layer 2 on the upper surface, and a quasi-one-dimensional nanostructure 3 of a chalcogenide cuprous compound is dispersed on the insulating layer 2. In the chalcogenide The two ends of the copper compound quasi-one-dimensional nanostructure 3 are respectively deposited with a first metal thin film electrode 4 and an In 2 S 3 The thin film 5, the quasi-one-dimensional nanostructure 3 of the chalcogenide cuprous compound is in ohmic contact with the first metal thin film electrode 4, and is in ohmic contact with the In 2 S 3 Thin film 5 forms a heterojunction; in In 2 S 3 A second metal film electrode 6 is deposited on the film 5, In 2 S 3 The thin film 5 is in ohmic contact with the second metal thin film electrode 6 .

[0043] Specifically, the quasi-one-dimensional nanostructure of the chalcogenide compound used in this ex...

Embodiment 2

[0053] The preparation method of the nano-heterojunction solar cell of this example is the same as that of Example 1, the only difference being that the quasi-one-dimensional nanostructure of the chalcogenide compound used in this example is Cu grown by chemical vapor deposition (CVD). 2 S nanowires. The nano solar cell prepared in this embodiment is 50mW / cm 2 , Under the irradiation of monochromatic light with a wavelength of 405nm, it presents remarkable photovoltaic characteristics, such as Figure 4 As shown, the open circuit voltage is 0.07V, the short circuit current is 2.67nA, the fill factor is 21.5%, and the conversion efficiency is ~1.61%.

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Abstract

The invention discloses a nano heterojunction solar cell based on a chalcogenide cuprous compound and a preparation method thereof. The nano heterojunction solar cell based on the chalcogenide cuprous compound is characterized in that a silicon substrate whose upper surface is covered with an insulating layer serves as a substrate, a chalcogenide cuprous compound quasi-one-dimensional nano-structure is dispersed on the insulating layer, a first metal film electrode and an In2S3 film are deposited respectively on two ends of the chalcogenide cuprous compound quasi-one-dimensional nano-structure, the chalcogenide cuprous compound quasi-one-dimensional nano-structure is in ohmic contact with the first metal film electrode and forms a heterojunction with the In2S3 film, a second metal film electrode is deposited above the In2S3 film, the In2S3 film is in ohmic contact with the second metal film electrode. According to the invention, the nano heterojunction solar cell completely uses environmental-friendly inorganic semiconductor materials, the preparation process is simple and easy, and the device performance is superior.

Description

[0001] 1. Technical field [0002] The invention relates to a nano-heterojunction solar cell and a preparation method thereof, in particular to a nano-solar cell based on a chalcogen cuprous compound heterojunction and a preparation method thereof. [0003] 2. Background technology [0004] Since the invention of the first planar silicon-based integrated circuit in 1959, the planar silicon process has dominated the development of the integrated circuit industry. After half a century of development, the integrated circuit has developed from the first integrated circuit board containing five electronic components to a very large scale integrated circuit. The number of components integrated in a single circuit chip reaches hundreds of millions or even tens or tens of billions. The process of integrated circuit development is actually a process in which the feature size of devices is continuously reduced, the degree of integration is continuously improved, and the performance-price...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/0352H01L31/18
CPCH01L31/0322H01L31/035227H01L31/18Y02E10/541Y02P70/50
Inventor 吴春艳潘志强王友义陈士荣罗林保
Owner HEFEI UNIV OF TECH