An array substrate and its manufacturing method, a display panel and a display device
A technology of an array substrate and a manufacturing method, which is applied in the display field, can solve problems such as damage to the gate insulating layer, difficulty in ensuring the dielectric constant of the gate insulating layer, and affecting the performance of thin-film transistors and storage capacitors, so as to ensure the dielectric constant, ensure performance, The effect of reducing the thickness
Active Publication Date: 2019-04-23
BOE TECH GRP CO LTD +1
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Problems solved by technology
However, the ion doping process will cause damage to the gate insulating layer located above the semiconductor pattern, making it difficult to ensure the dielectric constant of the gate insulating layer, affecting the performance of thin film transistors and storage capacitors
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[0028] An embodiment of the present invention provides an array substrate, including: a thin film transistor and a storage capacitor, the storage capacitor includes a first electrode and a second electrode oppositely arranged, the first electrode is made of a metal material, and the thin film transistor The active layer is set at the same layer.
[0029] Since one of the electrodes of the storage capacitor is set on the same layer as the active layer of the thin film transistor, the thickness of the array substrate can be reduced. At the same time, the electrode is made of metal material instead of the semiconductor material used to make the active layer. It is made by ion doping, so that the gate insulating layer above the semiconductor material will not be damaged due to the ion doping process, and the dielectric constant of the gate insulating layer is ensured, thereby ensuring the performance of the thin film transistor and the storage capacitor.
[0030] In order to furth...
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The invention provides an array substrate and a manufacturing method thereof, a display panel and a display device. The array substrate comprises a thin-film transistor and a storage capacitor. The storage capacitor comprises a first electrode and a second electrode which are oppositely arranged. The first electrode is made of metal material and is arranged at the same layer of the active layer of the thin-film transistor. One of the electrodes of the storage capacitor is arranged at the same layer of the active layer of the thin-film transistor so that the thickness of the array substrate can be reduced. Meanwhile, the electrode is made of the metal material rather than semiconductor material used for manufacturing the active layer through ion doping so that damage to a gate insulating layer above the semiconductor material caused by the ion doping technology can be avoided, the dielectric constant of the gate insulating layer can be ensured and thus the performance of the thin-film transistor and the storage capacitor can be guaranteed.
Description
technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate and a manufacturing method thereof, a display panel and a display device. Background technique [0002] An organic light emitting diode (OLED) array substrate generally includes thin film transistors and storage capacitors. In the prior art, when forming an array substrate including thin film transistors and storage capacitors, in order to reduce the thickness of the array substrate, it is possible to form a semiconductor pattern while forming a pattern of the active layer, and then perform ion doping on the semiconductor pattern. Doping makes it a conductor and serves as one of the electrodes of the storage capacitor. That is, one electrode of the storage capacitor is located at the same layer as the active layer, thereby reducing the thickness of the array substrate. However, the ion doping process will cause damage to the gate insulating layer loc...
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IPC IPC(8): H01L27/12H01L21/77
CPCH01L27/1214H01L27/1255H01L27/1259
Inventor 韩帅田宏伟
Owner BOE TECH GRP CO LTD