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Method and device for producing triruthenium dodecacarbonyl

A technology of triruthenium dodecacarbonyl and its manufacturing method, applied in the field of manufacturing triruthenium dodecacarbonyl, capable of solving problems such as burning of ruthenium thin films

Active Publication Date: 2017-12-05
TANAKA PRECIOUS METAL IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This is because even though the content of impurity elements is small, burning may occur when forming a ruthenium thin film

Method used

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  • Method and device for producing triruthenium dodecacarbonyl
  • Method and device for producing triruthenium dodecacarbonyl
  • Method and device for producing triruthenium dodecacarbonyl

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0051] Place 1.5kg of DCR crude crystals on the sintered filter of the above-mentioned sublimation device, and carry out sublimation under the conditions of supply gas flow rate of 500sccm, heating temperature of 100°C, and vacuum degree of 26.6Pa, then cool the water at a temperature of 5°C DCR was precipitated (Test No. 1-4). The supply gas in this embodiment is CO only (CO concentration 100%). In addition, sublimation was performed in the same manner for each of Examples and Comparative Examples having the CO gas flow rate, heating temperature, sublimation time, etc. shown in Table 2.

[0052] [Table 2]

[0053]

[0054] *In Test No.1-3, DCR turned black after sublimation and could not be recovered.

[0055] When CO is supplied during sublimation, the sublimation rate is fast and DCR can be obtained with high yield even when the processing amount of crude DCR is large (1500g) (Test No. 1-4 to 1-9) . On the other hand, in the case of a small amount of crude DCR (130 g...

no. 2 approach

[0065] Crude DCR was purified in a sublimation apparatus with a sintered filter thickness of 3.0 mm (Test No. 2-1) and 1.7 mm (Test No. 2-2). The results are shown in Table 4. The sublimation conditions were the same as those of Test Nos. 1-4 of the first embodiment (DCR 1500 g, CO flow rate 500 sccm, heating temperature 100° C., pressure 26.6 Pa, sublimation time 18.5 hours). For Test No. 2-2, the measurement of impurity elements was also performed by ICP-MS.

[0066] [Table 4]

[0067] Test No.

Sintered filter

sublimation time

Yield

sublimation speed

2-1

3.0mm

18.5 hours

95

125

2-2

1.7mm

18.5 hours

87

100

[0068]As shown in Table 4, when the thickness of the sintered filter is 3.0 mm (Test No. 2-1), the sublimation rate is faster compared with the case of a thickness of 1.7 mm (Test No. 2-2). DCR was obtained in high yield. This is considered to be because by increasing the thickness of the filter, CO...

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Abstract

The present invention provides a method for producing DCR that can efficiently sublimate a large amount of crude DCR to stably supply DCR. Also, the present invention relates to a sublimation apparatus applicable to the production method. The method for producing an organoruthenium compound for a chemical vapor deposition raw material containing dodecacarbonyl triruthenium (DCR) includes the step for purifying DCR by separating impurity elements from crude DCR by a sublimation method, and in the purification step, crude DCR is heated and sublimated in an atmosphere having a carbon monoxide concentration of 30 to 100% and then cooled to precipitate DCR. According to the present invention, a large amount of crude DCR can be efficiently sublimated, and thus a large amount of DCR can be supplied stably.

Description

technical field [0001] The present invention relates to a method for producing triruthenium dodecacarbonyl, which is used as a raw material for producing a ruthenium thin film or a ruthenium compound thin film by a chemical deposition method, and an apparatus used for the manufacturing method. Background technique [0002] When producing a ruthenium thin film or a ruthenium compound thin film by chemical deposition methods such as CVD (Chemical Vapor Deposition) and ALD (Atomic Layer Deposition), various organic ruthenium compounds are known as raw material compounds. Among these organic ruthenium compounds, dodecacarbonyl triruthenium (hereinafter referred to as DCR) represented by the following formula has been studied as a compound for practical use in recent years. [0003] [chemical 1] [0004] [0005] DCR is a substance with a melting point of 154-155°C and a solid (orange crystal) at room temperature. DCR is a simple molecular structure composed of Ru and CO, an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/16C01G55/00
CPCC01G55/008C01P2006/80C23C16/16B01D7/00
Inventor 中川裕文石坂翼石田博文萩原谦熊仓亚希子
Owner TANAKA PRECIOUS METAL IND