light emitting device
A light-emitting device and light-emitting layer technology, which is applied in the direction of lighting devices, light sources, semiconductor devices of light-emitting elements, etc., and can solve problems such as non-lighting and reduced luminosity of LED chips
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0075] Firstly, a distributed Bragg reflective film (DBR film) was formed on a conductive N-type GaAs single crystal substrate by the organic metal vapor phase growth method. Next, an n-AlInGaP cladding layer, an AlInGaP active layer with a multiple quantum well structure, and a p-AlInGaP cladding layer are formed to form a light-emitting part of a double heterojunction structure. On this basis, after forming a GaAs ohmic contact layer and a buffer layer, an ITO transparent electrode film with a thickness of 1.0 μm was formed by vacuum evaporation. In this way, a 3-inch red LED epitaxial wafer (light emission wavelength: 630nm) was produced by forming a thin film laminate as a light emitting part on a GaAs single crystal substrate.
[0076]Next, the non-light-emitting surface of the LED wafer was ground with a diamond die so that the thickness of the LED chip was 170 μm, and the surface roughness Ra of the back surface (non-light-emitting surface) of the LED chip was 2 μm. Af...
Embodiment 2～14、 comparative example 1～10
[0085] In addition to the chip area (GaAs substrate area) S 1 , the area S of the light-emitting layer 2 , the distance H from the surface of the semiconductor substrate to the surface of the first electrode, the thickness of the first electrode, the presence or absence of the transparent electrode, and the thickness are changed as shown in Table 1 and Table 2, and are produced in the same manner as in Example 1. light emitting device. Among them, in Examples 9 to 12 and Comparative Examples 7 to 8, a polyethylene terephthalate sheet having a thickness of 180 μm was prepared as the first translucent insulator and the second translucent insulator, and the polyethylene terephthalate sheet was prepared in this polyethylene terephthalate sheet. After forming a 0.15 μm ITO film on the surface of an ethylene terephthalate sheet by vacuum evaporation, a circuit was formed by laser processing, and the formed members were used as the first light-transmitting support substrate and the ...
Embodiment 15
[0086] (Example 15, Comparative Example 11)
[0087] On the Si substrate, the p-AlInGaP cladding layer, the AlInGaP active layer of the multiple quantum well structure, the n-AlInGaP cladding layer, the ohmic contact layer, the buffer layer, and the ITO transparent electrode film with a thickness of 1.0 μm were fabricated through the bonding metal layer. A 3-inch red LED epitaxial wafer (light emission wavelength: 630nm) was formed. A light-emitting device of Example 15 was fabricated in the same manner as in Example 1 except that the red LED epitaxial wafer was used. The produced light-emitting device was subjected to the characteristic evaluation described later. In addition to changing the area S of the light-emitting layer 2 A light emitting device of Comparative Example 11 was produced in the same manner as in Example 15 except for the thickness of the first electrode.
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More