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Test method and device for reading operation timer value in memory

A test method and memory technology, applied in the field of memory, can solve problems such as unsuitable memory and inconvenient use for users, and achieve the effect of convenient use

Active Publication Date: 2018-11-16
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, the above method can only be implemented before the memory package, and is not suitable for implementation after the memory package, which brings inconvenience to users

Method used

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  • Test method and device for reading operation timer value in memory
  • Test method and device for reading operation timer value in memory
  • Test method and device for reading operation timer value in memory

Examples

Experimental program
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Embodiment Construction

[0025] refer to figure 1 , taking the flash memory 1 as an example, before packaging the flash memory 1, apply the power supply voltage Vdd to the flash memory 1, and input such as figure 2 The address signal ADD shown, and the read operation control signal CTRL. Under the control of the control signal CTRL, a read operation control signal SEN is generated inside the flash memory 1 , and the read operation control signal SEN can control the read circuit to read data of an address corresponding to the input address signal ADD. When the flash memory 1 is performing a read operation, use a specific instrument to prick the non-passivated surface of the memory, and you can obtain such figure 2 The read operation control signal SEN shown.

[0026] However, the above-mentioned method for obtaining the value of the read operation timer is only applicable before the memory is packaged, and once the memory is packaged, the value of the read operation timer cannot be obtained through...

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Abstract

The invention discloses a test method and device of a numerical value of a read operation timer in a memory. The method comprises the following steps: inputting an address signal and a control signal into the memory, and controlling a read circuit in the memory to execute the read operation according to the address signal through the control signal; regulating the overturning period of the input address signal, and detecting the change situation of average power consumption when the memory executes the read operation according to the regulated address signal; and when a detection result shows that the change tendency of the average power consumption is subjected to hopping, taking the overturning period of the corresponding address signal when the change tendency of the average power consumption is subjected to the hooping as the numerical value of the read operation timer in the memory, and outputting the numerical value of the read operation timer. The method can be applied to obtain the numerical value of the read operation timer in the memory after the memory is packaged so as to bring convenience for users to use.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a method and device for testing the value of a read operation timer in a memory. Background technique [0002] Memory (Memory) is a memory device in a computer system used to store programs and data. All information in the computer, including input raw data, computer programs, intermediate running results and final running results are stored in the memory. [0003] Usually, each memory can contain multiple timers according to the objects being timed. For example, the memory may include a read operation timer for timing a read operation, a write operation timer for timing a write operation, an erase operation timer for timing an erase operation, and the like. [0004] In practical applications, it is often necessary to obtain the value of the read operation timer in the memory, and then use the value to analyze some characteristics of the memory. At present, the usual way to obt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/50
CPCG11C29/50012
Inventor 杨光军
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP