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Semiconductor resistor

A semiconductor, resistor technology

Active Publication Date: 2016-07-20
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The present invention provides a semiconductor resistor to solve the problem in the prior art that additional functional modules need to be set to apply voltage to the gate, resulting in the complexity and high cost of the entire integrated circuit

Method used

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  • Semiconductor resistor
  • Semiconductor resistor

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Embodiment 1

[0017] This embodiment provides a semiconductor resistor, such as figure 1 Shown is a schematic cross-sectional structure diagram of the semiconductor resistor of this embodiment. The semiconductor resistor provided in this embodiment includes: an N-type substrate 1 , a P-type gate 2 , a P-type source 3 , a P-type drain 4 , an N-type doped region 5 and a metal connection line 101 .

[0018] Among them, the P-type gate 2 is formed on the N-type substrate 1; the P-type source 3 and the P-type drain 4 are formed on both sides of the P-type gate 2 and located in the N-type substrate 1; the N-type doping The region 5 is formed in the N-type substrate 1 and is close to the P-type source 3; the metal connection line 101 is connected to the N-type doped region 5, the P-type source 3 and the P-type gate 2; the N-type doped region 5, The P-type source 3 and the P-type gate 2 constitute one end of the semiconductor resistor, and the P-type drain 4 constitutes the other end of the semico...

Embodiment 2

[0024] This embodiment is a further supplementary description of the above embodiments.

[0025] In this example, by adjusting figure 1 The doping concentration of the P-type gate 2 of the semiconductor resistor, the doping concentration of the N-type substrate 1 and the doping concentration of the P-type source 3 and the P-type drain 4 can make the semiconductor resistor in the first embodiment Threshold voltage is greater than 0 volts, like this, when the voltage between P-type source 3 and P-type gate 2 is 0 volts, add appropriate voltage between P-type source 3 and P-type drain 4, just A current will be generated between the P-type source 3 and the P-type drain 4. When the voltage between the P-type source 3 and the P-type drain 4 is fixed, the current value will also be fixed accordingly, that is, the performance resistive properties. For example, semiconductor resistors can be constructed with threshold voltages between 0.1 volts and 0.5 volts.

[0026] In this embodi...

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Abstract

The invention discloses a semiconductor resistor. The semiconductor resistor comprises an N-type substrate, a P-type grid, a P-type source, a P-type drain, an N-type doping region and a metal connection line, wherein the P-type grid is formed on the N-type substrate, the P-type source and the P-type drain are formed at two sides of the P-type grid and are arranged in the N-type substrate, the N-type doping region is formed in the N-type substrate and is close to the P-type source, the metal connection is connected to the N-type doping region, the P-type source and the P-type grid, the N-type doping region, the P-type source and the P-type grid form one end of the semiconductor resistor, and the P-type drain forms the other end of the semiconductor resistor. In the semiconductor resistor disclosed by the invention, no extra functional module is arranged to apply voltage so that the semiconductor conductor has an effect of an equivalent resistor, a P-type conductive channel is not needed to be arranged between the source and the drain, the structure and the fabrication process of the semiconductor resistor are simplified, and the cost is reduced.

Description

technical field [0001] The invention relates to a semiconductor technology in an integrated circuit, in particular to a semiconductor resistor. Background technique [0002] At present, there are mainly the following types of resistors in integrated circuits: diffusion resistors, polysilicon resistors, and metal oxide semiconductors (MetalOxideSemiconductor, hereinafter referred to as MOS transistors). [0003] Among them, the structure of the existing MOS transistor is a three-terminal structure, including a gate, a source and a drain, and a voltage is applied between the gate, the source and the drain, and by adjusting the potential difference between the gate and the source and The potential difference between the drain and the source generates a drain current, so that the MOS tube acts as an equivalent resistance. [0004] However, in the prior art, it is necessary to install another functional module in the integrated circuit to apply a voltage to the gate so that the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/8605
Inventor 潘光燃王焜文燕石金成高振杰
Owner FOUNDER MICROELECTRONICS INT