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Piezoelectric ceramic oscillator with stable temperature

A technology of piezoelectric ceramics and dielectric ceramics, applied in the field of piezoelectric ceramics, can solve problems such as difficult batch industrialization, achieve the effects of improving piezoelectric performance and reliability, improving capacitance temperature coefficient, and expanding the scope of application

Active Publication Date: 2016-07-20
欧明 +4
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing piezoelectric ceramic vibrator must maintain good piezoelectric electrical properties (dielectric constant, electromechanical coupling coefficient) and at the same time control its capacity change rate to ±10%, which is difficult to mass industrialize.

Method used

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  • Piezoelectric ceramic oscillator with stable temperature
  • Piezoelectric ceramic oscillator with stable temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] The capacitance temperature change rate of piezoelectric ceramics at -30°C is -14.8%, and the capacitance temperature change rate at +85°C is +12.8%; the capacitance temperature change rate of dielectric ceramics at -30°C is 217%. The capacity temperature change rate at +85°C is -55.2%, the thickness of the dielectric ceramic medium is 20 microns, and the dielectric ceramic medium is fixed on the top or bottom of the piezoelectric ceramic with epoxy resin. Both the piezoelectric ceramic and the dielectric ceramic medium are sintered by the solid-state method to form a multilayer ceramic structure. The first and second electrode layers are silver electrodes with a thickness of 5 microns, and the piezoelectric ceramic vibrator is made as required.

Embodiment 2

[0035] The capacitance temperature change rate of piezoelectric ceramics at -30°C is -15%, and the capacitance temperature change rate at +85°C is +15%; the capacitance temperature change rate of dielectric ceramics at -30°C is 250%. The capacity temperature change rate at +85°C is -60%, the thickness of the dielectric ceramic medium is 40 microns, and the dielectric ceramic medium is fixed on the top or bottom of the piezoelectric ceramic with conductive silver glue. Piezoelectric ceramics and dielectric ceramic media are sintered by solid-state method to form a multilayer ceramic structure. The first and second electrode layers are silver / palladium electrodes with a thickness of 20 microns, and piezoelectric ceramic vibrators are made according to requirements.

Embodiment 3

[0037] The capacitance temperature change rate of piezoelectric ceramics at -30°C is -14.8%, and the capacitance temperature change rate at +85°C is +12.8%; the capacitance temperature change rate of dielectric ceramics at -30°C is 150%. The capacity temperature change rate at +85°C is -30%, the thickness of the dielectric ceramic medium is 60 microns, and the dielectric ceramic medium is fixed on the top or bottom of the piezoelectric ceramic with epoxy resin. Piezoelectric ceramics and dielectric ceramics are sintered by solid-state method to form a multilayer ceramic structure. The first electrode layer is silver / palladium electrode, and the second electrode layer is silver electrode. The thickness is 10 microns. Electric ceramic vibrator.

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Abstract

The invention provides a piezoelectric ceramic oscillator with stable temperature. The piezoelectric ceramic oscillator comprises piezoelectric ceramic, a dielectric ceramic medium, a first leading-out end and a second leading-out end, wherein first electrode layers are formed on the surfaces of the top and the bottom of piezoelectric ceramic, a layer of piezoelectric ceramic medium covers the surface of the first electrode layer at the top or the bottom of the piezoelectric ceramic, a second electrode layer is formed on the surface of the piezoelectric ceramic medium, the length of the piezoelectric ceramic medium is slightly smaller than that of piezoelectric ceramic, the first leading-out end is in close contact with the first electrode layer opposite to the piezoelectric ceramic medium covered on the piezoelectric ceramic, the second leading-out end is in close contact with the second electrode layer formed on the surface of the piezoelectric ceramic medium, the capacitance temperature change of the piezoelectric ceramic is below + / -15% at 30-85 DEG C, and the capacitance temperature change of the piezoelectric ceramic medium ranges 60% to +250% at 30-85 DEG C.

Description

technical field [0001] The invention relates to the field of piezoelectric ceramics, in particular to a temperature-stabilized piezoelectric ceramic vibrator, in particular to a piezoelectric ceramic vibrator used for a reversing radar probe. Background technique [0002] Since the advent of piezoelectric ceramics, many countries at home and abroad have conducted systematic research on piezoelectric ceramics, and with the deepening of research, they have also developed a series of PZT piezoelectric ceramic materials with superior performance, and the application of piezoelectric ceramic materials The scope has also been greatly expanded, among which lead zirconate titanate is used as the basis for modification. In order to obtain high-performance piezoelectric ceramics, most of the PZT materials themselves are doped and modified at present. By doping the A-site or B-site ions in the PZT piezoelectric ceramics, the performance of the PZT piezoelectric ceramics can be adjusted...

Claims

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Application Information

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IPC IPC(8): H01L41/187H01L41/083C04B35/491C04B35/49
CPCC04B35/49C04B35/491C04B2235/3215C04B2235/3224H10N30/50H10N30/8536H10N30/853H10N30/8554
Inventor 欧明姜知水文理董进杰
Owner 欧明