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Formation method of semiconductor structure

A semiconductor and interconnection structure technology, applied in the field of semiconductor structure formation, can solve the problems of long time consumption, low production efficiency, and large thickness of the second substrate 11, and achieve the effects of improving production efficiency and quality

Active Publication Date: 2018-08-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, the thickness of the second substrate 11 removed by dry etching is large, the cost is high, and it can only be operated on a single wafer, and it takes a long time for mass production
Production efficiency is relatively low

Method used

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Embodiment Construction

[0031] As mentioned in the background art, in the manufacturing process of the MEMS-TSV bonding structure, in order to make the volume of the formed working unit smaller, the backside of the first wafer is usually thinned by mechanical grinding, but mechanical grinding may Damage to the first wafer of the substrate may affect the performance of MEMS structures and working circuits. After thinning the first wafer, dry etching should be performed on the second wafer to expose the TSV structure, but the thickness of the second wafer thinned by dry etching is large, the cost is high, and it can only be For a single wafer operation, it takes a long time to produce in batches, and the production efficiency is relatively low.

[0032] In order to solve the above-mentioned technical problems, the present invention proposes a method for forming a semiconductor structure. In the present invention, a MEMS structure is formed in the first wafer, and a TSV structure is formed in the second...

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Abstract

The invention provides a semiconductor structure forming method. The method comprises steps: a first wafer and a second wafer are provided, a MEMS ((Micro-Electro-Mechanical System) structure is formed in the first wafer, a TSV (Through-Silicon Via) structure is formed in the second wafer, and a wafer bonding structure formed by the first wafer and the second wafer can be used for making an MEMS-TSV bonding structure; and through wet etching by being immersed in an etching solution, wafer back thinning is synchronously carried out on the first wafer and the second wafer. The first wafer and the second wafer are little damaged, and the MEMS-TSV bonding structure production efficiency is effectively improved. As sealing is realized between the first wafer and the second wafer, the etching solution does not enter the wafer bonding structure from between the first wafer and the second wafer, the wafer bonding structure is not damaged, and the MEMS-TSV bonding structure quality is improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming a semiconductor structure. Background technique [0002] With the development of semiconductor technology, Micro-Electro-Mechanical System (MEMS) has become a research hotspot in semiconductor technology. [0003] MEMS typically have complex multi-layer structures that require multiple wafers to be bonded together to form. Therefore, the MEMS-TSV bonding structure has become the key research object of the current MEMS manufacturing technology. For example, the MEMS cavity structure and working circuit are formed in the first wafer, and the TSV (through-silicon via, through Through-silicon interconnection) interconnection structure, and then the first wafer and the second wafer are bonded together to form a micro-electro-mechanical system with complete functions. After the first wafer and the second wafer are bonded, the second wafer and the third wafer with ME...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/603B81C3/00H01L21/02B81C1/00
Inventor 倪梁施林波陈福成汪新学
Owner SEMICON MFG INT (SHANGHAI) CORP