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Memory structure and manufacturing method of same

A manufacturing method and memory technology, applied in static memory, digital memory information, information storage, etc., can solve problems such as unreachable

Active Publication Date: 2016-08-03
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, traditional etching methods may not be able to achieve the above goals

Method used

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  • Memory structure and manufacturing method of same
  • Memory structure and manufacturing method of same
  • Memory structure and manufacturing method of same

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Embodiment Construction

[0034] Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The same reference numerals are used in the drawings to designate the same or similar parts. It should be noted that the drawings have been simplified to facilitate a clear description of the content of the embodiments, and the size ratios in the drawings are not drawn in the same proportion as actual products, so they are not used to limit the protection scope of the present invention.

[0035] figure 1 A partial cross-sectional view of a memory structure 100 according to an embodiment of the present invention is shown. Such as figure 1 As shown, the memory structure 100 includes an insulating layer 10 , a first electrode layer 21 and a first barrier layer 31 . The insulating layer 10 has a recess 101 . The first electrode layer 21 is formed in the alcove 101, and the first electrode layer 21 has a first upper surface 21a. The first barrier layer 31 ...

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Abstract

The invention provides a memory structure, which includes an insulating layer, a first electrode layer and a first barrier. The insulating layer has a recess. The first electrode layer is formed in the recess and has a first top surface. The first barrier is formed between the insulating layer and the first electrode layer, and has a second top surface lower than the first top surface. The first top surface and the second top surface are lower than an opening of the recess.

Description

technical field [0001] The present invention relates to a memory structure and a manufacturing method thereof, and in particular to a variable resistance memory (Resistive randomdom-access memory, ReRAM) structure and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, various semiconductor components are constantly being introduced. For example, components such as memories, transistors, and diodes have been widely used in various electronic devices. In the development of memory technology, researchers continue to carry out various types of R&D and improvement, among which variable resistance memory is one of the types. [0003] Variable resistance memory uses the resistance of the storage element as the basis for judging the state of information storage, and it has better performance in terms of device density, power consumption, programming / erasing speed, or three-dimensional space stacking characteristics . ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/24H01L45/00G11C13/00
CPCH10N70/20H10N70/826H10N70/828H10N70/841H10N70/8833H10N70/011H10N70/028H10N70/066
Inventor 林昱佑李峰旻卢建宏曾钦义
Owner MACRONIX INT CO LTD