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Method for fabricating chalcogenide films

A technology of chalcogenide and manufacturing method, which is used in semiconductor/solid-state device manufacturing, gaseous chemical plating, metal material coating process, etc.

Inactive Publication Date: 2016-08-17
G FORCE NANOTECH LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it remains challenging to provide scalable chalcogenide films with thinner and uniform thickness

Method used

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  • Method for fabricating chalcogenide films
  • Method for fabricating chalcogenide films
  • Method for fabricating chalcogenide films

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Embodiment Construction

[0039] The objects, features and advantages of the embodiments of the present disclosure can be better understood by referring to the following detailed description in conjunction with the accompanying drawings. Embodiments of the present disclosure provide alternative embodiments to describe alternative features for practicing the method. Furthermore, the configuration of each component in the embodiment is used to explain the present disclosure but not to limit the scope of the present disclosure. In addition, repeated symbols or symbols may be used in different embodiments, and these repetitions are only for the purpose of simply and clearly describing the present disclosure, and do not mean that there is a specific relationship between the different embodiments and / or structures discussed.

[0040] The terms "about" and "substantially" usually mean + / - 20%, more usually + / - 10%, more usually + / - 5% of the stated value. The values ​​stated in this disclosure are approximat...

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Abstract

A method for fabricating a chalcogenide film is presented. The method includes providing a substrate in a chamber and performing a first atomic layer deposition process to form a first oxide film on the substrate; performing a first chalcogenization process including introducing a first chalcogen element to transform the first oxide film into a first chalcogenide film; and performing an annealing process on the first chalcogenide film.

Description

technical field [0001] The present disclosure relates to a method for manufacturing a chalcogenide thin film, in particular to a method for manufacturing a chalcogenide thin film by atomic layer deposition. Background technique [0002] In recent years, chalcogenide thin films have been studied and used in many applications. Chalcogenide thin films have a wide energy band gap and have the potential to provide short-wavelength optical emission. In general, chalcogenide films include chalcogen atoms and at least one additional element, which are typically used to modify electrical properties. [0003] Chalcogenide thin films may be fabricated from precursors by using a chemical vapor deposition (CVD) process or a metal organic chemical vapor deposition (MOCVD) process. Additionally, chalcogenide films can be peeled off from layered chalcogenide bulks and transferred to substrates. However, it remains challenging to provide scalable chalcogenide films with thinner and unifor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/455C23C16/56
CPCC23C16/305C23C16/45525C23C16/45536C23C16/56C23C16/40H01L21/02483H01L21/02485H01L21/02565H01L21/02568H01L21/02612H01L21/02614H01L29/66969H01L29/861H01L21/477
Inventor 叶昭辉邱壬官
Owner G FORCE NANOTECH LTD