A method of forming a fin
A technology of trenches and material layers, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve problems such as gate threshold voltage drop, signal-to-noise ratio drop, and deterioration of device electrical performance, and achieve the goal of improving integration Effect
Active Publication Date: 2019-06-14
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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The short channel effect will deteriorate the electrical performance of the device, such as causing a decrease in the gate threshold voltage, an increase in power consumption, and a decrease in the signal-to-noise ratio.
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[0028] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.
[0029] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.
[0030] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...
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The invention provides a fin forming method. The method comprises: a semiconductor substrate is provided, and a pattern transfer layer is formed on the substrate; a first groove exposing the substrate is formed in the pattern transfer layer; the first groove is filled with a laminated layer which at least comprises a first material layer on the inner surface of the first groove and a second material layer on the first material layer, and the first material layer at least has etching selectivity with respect to the second material layer; selective etching is carried out, and the first material layer on the side wall of the first groove is removed to form a second groove; and epitaxial growth of a fin is carried out in the second groove. The method controls the size of the formed second groove through the thickness of the formed material layers and further controls the size of the formed fin. Lithography technology is not needed for forming the small-size fin, and thus the integrity of devices is improved.
Description
technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a fin forming method. Background technique [0002] With the high integration of semiconductor devices, the channel length of MOSFET continues to shorten, and a series of effects that can be ignored in the long channel model of MOSFET become more and more significant, and even become the dominant factor affecting the performance of the device. This phenomenon is collectively called short channel road effect. The short channel effect will deteriorate the electrical performance of the device, such as causing a decrease in the gate threshold voltage, an increase in power consumption, and a decrease in the signal-to-noise ratio. [0003] In order to overcome the short-channel effect, a three-dimensional device structure of Fin Field Effect Transistor (Fin-FET) is proposed. Fin-FET is a transistor with a fin-shaped channel structure. This kind of device uses several surface...
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IPC IPC(8): H01L21/336
Inventor 赵利川马小龙殷华湘闫江
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI