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High-quality nanowire cmos device, manufacturing method thereof, and electronic device including same

A nanowire and device technology, applied in the field of nanowire complementary metal oxide semiconductor devices and their manufacture, and electronic equipment, can solve problems such as the difficulty in forming high-quality high-mobility semiconductor materials, and achieve the effect of avoiding defects

Active Publication Date: 2019-05-31
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is difficult to form high-quality high-mobility semiconductor materials

Method used

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  • High-quality nanowire cmos device, manufacturing method thereof, and electronic device including same
  • High-quality nanowire cmos device, manufacturing method thereof, and electronic device including same
  • High-quality nanowire cmos device, manufacturing method thereof, and electronic device including same

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Embodiment Construction

[0011] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0012] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The invention discloses a nanowire complementary CMOS (Complementary Metal-Oxide-Semiconductor Transistor) device based on a high-quality epitaxial layer, a manufacture method of the nanowire complementary CMOS device and electronic equipment comprising the high-quality nanowire complementary CMOS device. According to the embodiment, the CMOS device can comprise a substrate, a p-type device and an n-type device, wherein the p-type device and the n-type device are formed on the substrate; one of the p-type device and the n-type device can comprise a first semiconductor nanowire, a first semiconductor layer, an isolation layer and a first gate stack, wherein the first semiconductor nanowire and the substrate are separated, and the first semiconductor nanowire extends along a curved longitudinal extension direction; at least parts of the first semiconductor layer are formed around the periphery of the first semiconductor nanowire; the isolation layer is formed on the substrate and is exposed out of the first semiconductor layer; the first gate stack is formed on the isolation layer and intersects with the first semiconductor layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a nanowire complementary metal-oxide-semiconductor (CMOS) device based on a high-quality epitaxial layer, a manufacturing method thereof, and an electronic device including the same. Background technique [0002] With the development of semiconductor devices, it is expected to use semiconductor materials with higher mobility than silicon (Si) to fabricate high-performance semiconductor devices such as metal oxide semiconductor field effect transistors (MOSFETs). However, it is difficult to form high-quality high-mobility semiconductor materials. Contents of the invention [0003] It is an object of the present disclosure, at least in part, to provide a high-quality epitaxial layer-based nanowire complementary metal-oxide-semiconductor (CMOS) device, a method of manufacturing the same, and an electronic device including the same. [0004] According to one aspect ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8238H01L27/092H01L29/06
CPCH01L21/823821H01L27/0924H01L29/0669
Inventor 朱慧珑
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI