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Silicon carbide complex, method for manufacturing same, and heat dissipation component using same

A composite and silicon carbide technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, electric solid-state devices, etc. The effect of the close coefficient of thermal expansion

Inactive Publication Date: 2016-09-28
DENKA CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the wettability of the ceramic as a reinforcing material and the alloy as a base material, the reaction layer at the interface, etc. also have a great influence on the thermal conductivity

Method used

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  • Silicon carbide complex, method for manufacturing same, and heat dissipation component using same
  • Silicon carbide complex, method for manufacturing same, and heat dissipation component using same
  • Silicon carbide complex, method for manufacturing same, and heat dissipation component using same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～8、 comparative example 1～4

[0062] Silicon carbide powder A (produced by Pacific Randon Co., Ltd.: NG-150, average particle diameter: 100 μm), silicon carbide powder B (produced by Yakushima Denko Co., Ltd.: GC-1000F, average particle diameter: 10 μm), and silica sol ( Nissan Chemical Co., Ltd. production: SNOWTEX) was compounded with a mass ratio of 60:40:10, mixed with a stirring mixer for 1 hour, and formed into a shape of 187mm×137mm×7mm under a pressure of 10MPa. Thereafter, the molded body was heated at 960° C. for 2 hours in the air to produce a silicon carbide porous body. The obtained silicon carbide porous body is processed into The relative density is calculated according to the size and mass, and the result is 65%.

[0063] Next, the obtained silicon carbide porous body was processed to a desired thickness with a diamond processing tool, and 12 samples of each sample were separated by a 0.8 mm thick SUS plate coated with a release agent, and the After configuring iron plates with a thickne...

Embodiment 9～11

[0079] The silicon carbide composite body manufactured in Comparative Example 1 was mounted on image 3 In the shown jig made of SUS-304, the stress perpendicular to the main surface was loaded with M10 screws, heated in an electric furnace at a temperature of 500°C for 30 minutes, and then cooled to room temperature to release the load. Table 5 shows the amount of warpage of the composite obtained. Next, Table 5 shows the results of evaluating the obtained composites by the same method as in Examples 1 to 8. As shown in Table 5, the adhesion rate can be improved by forming the convex surface using a jig.

[0080] [table 5]

[0081]

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Abstract

The invention inexpensively provides a heat dissipation component which has heat conductivity, a small specific gravity, a heat expansion coefficient close to that of a ceramic substrate, and warpage to thereby be able to be joined with good adhesiveness to a heat dissipation component or the like. A silicon carbide complex being a plate-shaped complex formed by impregnating a porous silicon carbide compact with metal having aluminum as a main component, wherein the amount of warpage per a length of 10 cm of a principal surface of the complex is 250 [mu]m or less, and the amount of warpage of a power module using the plate-shaped complex is 250 [mu]m or less, and a heat dissipation component using the same.

Description

technical field [0001] The present invention relates to a silicon carbide composite material, a method for producing the same, and a heat dissipation part using the composite material. High thermal conductivity of heat dissipation parts such as radiators of parts. Background technique [0002] In recent years, with the increase in the capacity of semiconductor elements and the advancement of high integration of semiconductor elements in the semiconductor field, how to efficiently dissipate heat generated by semiconductor elements to the outside has become an important issue. Semiconductor elements are generally used mounted on insulating substrates such as ceramic substrates. In this case, the heat released from the semiconductor element is dissipated to the outside through a heat dissipation component called a heat sink provided on the back surface of the substrate, so as to ensure the operating characteristics of the semiconductor element. [0003] Conventionally, as suc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/373H01L23/12
CPCH01L23/367H01L23/3731H01L23/3736H01L2924/0002H01L23/3738H01L2924/00B23P15/26B23P2700/10H01L21/4871H01L23/3735
Inventor 纪元德广津留秀树宫川健志
Owner DENKA CO LTD
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