Apparatus and method for forming film
A film-forming device and film-forming method technology, applied in spraying devices, liquid spraying devices, gaseous chemical plating, etc., can solve the problems of non-uniform fog particles, low film-forming rate, and difficult control, etc., and achieve film-forming rate excellent effect
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Embodiment 1
[0069] 1. Manufacturing device
[0070] First, with figure 1The film forming apparatus 1 used in this example will be described. The film forming apparatus 1 is provided with: a carrier gas source 2a for supplying carrier gas, a flow control valve 3a for adjusting the flow rate of the carrier gas sent from the carrier gas source 2a, a carrier gas source for dilution 2b for supplying a carrier gas for dilution, The flow regulating valve 3b for the flow rate of the dilution carrier gas sent by the carrier gas source 2b, the mist generation source 4 containing the raw material solution 4a, the container 5 containing water 5a, the ultrasonic vibrator 6 installed on the bottom surface of the container 5, the film forming chamber 7, The supply pipe 9 between the mist generation source 4 and the film forming chamber 7 , the hot plate 8 installed in the film forming chamber 7 , the exhaust pipe 17 and the exhaust fan 11 are connected. A substrate 10 is provided on the hot plate 8 . ...
Embodiment 2
[0085] Film formation was performed in the same manner as in Example 1 except that a square c-plane sapphire substrate with a side length of 10 mm was used as the substrate 10 . About the obtained thin film, similarly to the said comparative example, the phase (phase) was identified using the XRD diffraction apparatus for thin films. As a result, the resulting thin film is α-Ga 2 o 3 . In addition, the film thickness was measured as in the above comparative example. in addition,
[0086] Where film thickness is measured, it is as Figure 7 Various measurement locations ( B1 , B2 , B3 , B4 and B5 ) of thin films on substrate 20 are shown. The results are shown in Table 1 as Example 2.
[0087] 【Table 1】
[0088]
[0089] The average film thickness, film formation rate, coefficient of variation, and in-plane uniformity were obtained from the results in Table 1. The results are shown in Table 2. In addition, the average film thickness is the average value of the film ...
Embodiment 3
[0094] The molar ratio of gallium acetylacetonate and aluminum acetylacetonate was adjusted to be 1:6, and hydrochloric acid was 2% (volume ratio) aqueous solution, which was used as the raw material solution.
[0095] Film formation was performed in the same manner as in Example 1 using the prepared raw material solution, except that the film formation temperature was 600° C., the flow rate of the carrier gas was 8 LPM, and the film formation time was 3 hours. In addition, the flow velocity of the mist was 73.0 cm / sec. With respect to the obtained film, the content ratio of aluminum was measured by X-ray. XRD measurement results such as Figure 9 shown. According to the XRD measurement results, the obtained film is an AlGaO-based semiconductor film with a corundum structure and an aluminum content of 62.8%, which has been difficult to form until now. In addition, for the AlGaO-based semiconductor film obtained with a corundum structure, the measured film thickness was 720 ...
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Abstract
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