Unlock instant, AI-driven research and patent intelligence for your innovation.

Platen support structure

一种支撑结构、平台的技术，应用在放电管、电气元件、电路等方向，能够解决不利离子注入过程等问题

Active Publication Date: 2016-10-12
VARIAN SEMICON EQUIP ASSOC INC
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Furthermore, since the presence of gas or other foreign matter in the high vacuum environment of the platform may be detrimental to the ion implantation process, the platform portion and the floor must be coupled to each other in a manner that provides substantially leak-free transport of gases therebetween

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Platen support structure
  • Platen support structure
  • Platen support structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] Embodiments of the present invention provide a platform support structure for mechanically coupling a platform section to a floor of a heating platform. During operation, the platform support structures described herein can be adapted to thermally insulate the heated platform portion from the cold floor, while providing substantially leak-free gas transport therebetween, and while allowing thermal expansion and contraction of the dielectric layer. As will be appreciated, the platform support structures described herein may be implemented in heated platforms for supporting substrates during processing. For example, the heated platform may be used to support a substrate during an ion implantation process, a plasma deposition process, an etching process, a chemical mechanical planarization process, or generally any process in which a semiconductor substrate will be supported on the heated platform. Accordingly, an exemplary heating platform is described. It should be unde...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A platen support structure adapted to thermally insulate a heated platen portion from a cold base plate while providing substantially leak-free gas transport therebetween and while allowing thermal expansion and contraction of the platen portion. Various examples provide of the support structure provide a tubular flexure having an internal gas conduit, a platen portion mounting tab connected to the flexure and having an internal gas input slot that is in fluid communication with the internal gas conduit of the flexure, the platen portion mounting tab being adapted for connection to a platen portion of a platen, and a base plate mounting tab connected to the flexure and having an internal gas output slot that is in fluid communication with the internal gas conduit of the flexure, the base plate mounting tab being adapted for connection to a base plate of the platen.

Description

technical field [0001] Embodiments of the invention relate generally to the field of substrate processing, and more particularly to flexible platform support structures with integrated gas conduits. Background technique [0002] Ion implantation is the process of depositing chemicals into a substrate by directly bombarding it with excited ions. In semiconductor manufacturing, ion implanters are primarily used in the doping process to alter the type and level of conductivity of the target material. Accurate doping profiles in integrated circuit (IC) substrates and their thin film structures are important for proper IC performance. One or more ionic species can be implanted at different doses and at different energies in order to achieve the desired doping concentration. [0003] In some ion implantation processes, the desired doping concentration is achieved by implanting ions in the target substrate at high temperature (eg, between 150 and 600° C.). Heating the target sub...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/683
CPCH01J2237/2001H01J37/20H01J37/3171H01J2237/20H01J2237/31701H01L21/6833
Inventor 罗杰·B·费许史蒂芬·恩尔拉陶德·路易斯·马克阿册恩
Owner VARIAN SEMICON EQUIP ASSOC INC