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Three-layer microbridge structure, three-layer uncooled microbolometer and preparation method thereof

A micro-bridge structure and micro-bridge technology, applied in the field of infrared detectors, can solve the problems of single-layer micro-bridge structure with only one resonant cavity, the influence of device thermal and electrical performance, and the lack of mechanical stability of S-shaped bridge legs. Improved absorption efficiency, easier device performance, and improved temperature rise

Inactive Publication Date: 2019-04-26
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] In the traditional single-layer L-shaped micro-bridge structure, the length of the bridge legs is not enough, which leads to poor heat insulation effect of the whole device. To increase the heat insulation effect of the device, the bridge legs must be increased, and the size of the pixel cannot be reduced, otherwise the device The thermal and electrical properties will be greatly affected, and because the single-layer micro-bridge structure has only one resonant cavity, there is still insufficient optical absorption; although the new S-type double-layer micro-bridge structure designed in the United States has two resonant cavities, The optical absorption effect of the device is better, but the mechanical stability of the S-shaped bridge legs is not as good as the single-layer L-shaped structure

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  • Three-layer microbridge structure, three-layer uncooled microbolometer and preparation method thereof
  • Three-layer microbridge structure, three-layer uncooled microbolometer and preparation method thereof
  • Three-layer microbridge structure, three-layer uncooled microbolometer and preparation method thereof

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Embodiment Construction

[0046] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0047] A three-layer microbridge structure, including a bridge deck, a second layer of microbridges, a first layer of microbridges, left and right aluminum electrodes embedded between silicon substrates, between the bridge deck and the second layer of microbridges, the first Isolation layers are provided between the micro-bridge on the second floor and the micro-bridge on the first layer, and between the micro-bridge on the first layer...

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Abstract

The invention provides a three-layer micro-bridge structure, which includes a bridge deck, a second-layer micro-bridge, a first-layer micro-bridge, and left and right aluminum electrodes. The uppermost bridge deck of the micro-bridge structure is covered with a light-absorbing material and a thermistor film And the passivation layer, the upper optical resonant cavity is formed between the bridge surface and the second layer of micro-bridges, the middle optical resonant cavity is formed between the two layers of micro-bridges, and the lower optical resonant cavity is formed between the first layer of micro-bridges and the underlying silicon substrate. Resonant cavity, the present invention also provides a three-layer uncooled microbolometer comprising the microbridge structure and its preparation method, the microbridge structure of the present invention has three resonant cavities, and the optical absorption efficiency is greatly improved; During the simulation process, under the same stress conditions, the deformation of the three-layer S-type microbridge structure is smaller than that of the single-layer L-type and double-layer S-type structures, which ensures the good mechanical stability of the microbridge structure. At the same time, the growth of the bridge legs also increases the overall temperature rise of the device.

Description

technical field [0001] The invention relates to the field of infrared detectors, in particular to a three-layer microbridge structure, a three-layer uncooled microbolometer comprising the microbridge structure and a preparation method thereof. Background technique [0002] Infrared radiation has a wide range of applications, including communications, medical treatment, chemistry, biology, warfare and many other fields. According to the different wavelength ranges of infrared radiation, corresponding to different sources, propagation paths and detectors, the entire infrared spectral region can be divided into four bands according to the band size, which are: near infrared (NIR: 0.75 ~ 3μm), Chinese and foreign Red (MIR: 3-6μm), far-infrared (FIR: 6-15μm) and extreme far-infrared (15-1000μm). And in the atmosphere, the mid-infrared band and the long-wave infrared band have two atmospheric windows of 3-5 μm and 8-14 μm; infrared light is invisible light, and we can convert inv...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/20
CPCG01J5/023G01J5/024G01J5/20
Inventor 陈超王涛马振东马家锋伍浏权齐元
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA