A film system for correcting the relative thickness ratio of high and low refractive index materials in thin films
A technology of high and low refractive index and relative thickness, which is applied in the field of optical thin films, can solve problems such as the mismatch of thickness ratio between high and low refractive index materials, and unsatisfactory uniformity of the film layer, so as to achieve many characteristic peaks of the reference spectrum, convenient judgment and correction, and film The effect of simple structure
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Embodiment 1
[0020] It is necessary to prepare a dual-cavity narrow-band filter element with a half-width of less than 6nm and a diameter of 200mm×200mm. Due to the symmetrical structure of its film system, the requirements for the thickness ratio of high and low refractive index materials are extremely strict. At the same time, for such a large-sized narrow-band filter Spectral uniformity over the entire size of the light sheet is also extremely demanding. For this reason, first use the film structure SUB|HL1.5HLHL1.5HL|AIR mentioned in this design to simultaneously correct the thickness ratio of hafnium oxide and silicon oxide thin film elements, where SUB is the quartz substrate, and H is HfO 2 , L is SiO 2 . Its spectral curve is as figure 1 As shown, the design wavelength is 1550nm, and there are three main characteristic peaks. These three peaks can be used to characterize and judge the deviation and uniformity of the overall thickness of the thin film element and the ratio of high...
Embodiment 2
[0023] In the laser system, there is a demand for wide-angle and ultra-high-steep films. For example, a film needs to be coated on a 100mm×100mm quartz substrate, the incident angle range is 0-14°, and the spectrum requirement is T90%@1064nm-1100nm. This film system has two characteristics, one is that the cut-off degree is very high, and the other is that it is not sensitive to angle. This film system needs to control the thickness preparation precision of high and low refractive index extremely accurately, otherwise the cut-off degree cannot meet the requirements. At the same time, the size of 100mm×100mm also puts forward extremely high requirements on the control of the overall thickness uniformity of the film. In the actual preparation process, first use the film structure SUB|HL1.5HLHL1.5HL|AIR mentioned in this design to simultaneously correct the thickness ratio of hafnium oxide and silicon oxide thin film elements, where SUB is the quartz substrate, and H is HfO 2 ,...
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