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Environment sensor and manufacturing method thereof

An environmental sensor and manufacturing method technology, applied in the sensor field, can solve the problems such as the inability to highlight the advantages of the Wheatstone bridge and the poor common mode signal suppression effect.

Active Publication Date: 2016-11-09
GOERTEK MICROELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, when using a Wheatstone bridge, this quasi-differential capacitance structure cannot highlight the advantages of the Wheatstone bridge, and the suppression effect on common-mode signals is also poor.

Method used

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  • Environment sensor and manufacturing method thereof
  • Environment sensor and manufacturing method thereof
  • Environment sensor and manufacturing method thereof

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Embodiment Construction

[0027] Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that the relative arrangements of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present invention unless specifically stated otherwise.

[0028] The following description of at least one exemplary embodiment is merely illustrative in nature and in no way taken as limiting the invention, its application or uses.

[0029] Techniques, methods and devices known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, such techniques, methods and devices should be considered part of the description.

[0030] In all examples shown and discussed herein, any specific values ​​should be construed as exemplary only, and not as limitations. Therefore, other instances of the exemplary embodiment may have dif...

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PUM

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Abstract

The invention discloses an environmental sensor and a manufacturing method. At least one reference capacitor and at least one detection capacitor are arranged on a substrate; the detection capacitor includes a detection fixed electrode and a detection sensitive film communicated with an external environment; a first sealed cavity is formed between the detection sensitive film and the substrate; the reference capacitor includes a reference fixed electrode and a reference sensitive film; a second sealed cavity is formed between the reference sensitive film and the substrate; the first cavity is communicated with the second cavity; the environmental sensor comprises a cover body used for isolating the reference sensitive film from the external environment; the cover body and the reference sensitive film enclose a third sealed cavity; and the first cavity, the second cavity and the third cavity are non-vacuum environments. According to the environmental sensor, the detection capacitor and the reference capacitor can form a differential capacitance structure in the true sense, and the detection accuracy of the environmental sensor can be improved.

Description

technical field [0001] The present invention relates to the field of sensors, more specifically, to an environmental sensor, such as a pressure sensor, a temperature sensor, etc.; the present invention also relates to a manufacturing method of the environmental sensor. Background technique [0002] In recent years, with the development of science and technology, the volume of electronic products such as mobile phones and notebook computers has been continuously reduced, and people have higher and higher performance requirements for these portable electronic products, which requires the supporting electronic components The performance must also be higher and higher. As a measurement device, environmental sensors have been widely used in wearable and other electronic products. [0003] In existing environmental sensors, in order to filter out common-mode interference signals in the output signal, a reference capacitor whose capacitance does not change with the external enviro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01D5/241
CPCG01D5/2417
Inventor 周宗燐詹竣凯邱冠勋蔡孟锦
Owner GOERTEK MICROELECTRONICS CO LTD