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Monolithic ally integrated transistors for a buck converter

A transistor, high-side transistor technology, applied in the field of monolithic integrated transistors for buck converters, which can solve problems such as low switching efficiency

Active Publication Date: 2016-11-09
TEXAS INSTR INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Unfortunately, many buck converters are quite bulky, making them capable of handling high current levels at high switching frequencies and can do so with low switching efficiencies

Method used

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  • Monolithic ally integrated transistors for a buck converter
  • Monolithic ally integrated transistors for a buck converter
  • Monolithic ally integrated transistors for a buck converter

Examples

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Embodiment Construction

[0007] Existing synchronous buck converters with high current handling capability use discrete power metal oxide semiconductor field effect transistors (MOSFETs). One transistor is called a low-side transistor and the other transistor is called a high-side transistor. Such discrete solutions can introduce large parasitic inductance and resistance, which results in lower conversion efficiency. Some converters use package-integrated MOSFETs, but such solutions can have higher packaging costs. Other solutions use monolithic-integrated transistors for the buck converter, but use lateral-diffused metal-oxide-semiconductor (LDMOS) transistors for both the low-side and high-side transistors. Achieving a satisfactorily high current handling capability with acceptably high conversion efficiencies using such solutions can be difficult due to lateral current and metal spreading resistance limitations. Embodiments described herein address these issues.

[0008] figure 1 An example of ...

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Abstract

In described examples, an integrated semiconductor transistor chip (110a) for use in a buck converter includes a high side transistor (120a), which is formed on the chip (110a) and includes a laterally diffused metal oxide semiconductor (LDMOS) transistor. Also, the chip (110a) includes a low side transistor (130a), which is formed on the chip (110a) and includes a source down metal oxide semiconductor field effect transistor (MOSFET). Further, the chip (110a) includes: a substrate (138) for use as a source for the low side transistor (130a); and an n-doped well (122) for isolation of the high side transistor (120a) from the source of the low side transistor (130a).

Description

Background technique [0001] Synchronous buck converters are widely used in power supplies for portable computers, servers, telecommunication equipment, computing applications, and various other portable systems. Unfortunately, many buck converters are quite bulky, enabling them to handle high current levels at high switching frequencies and can do so with low switching efficiencies. Contents of the invention [0002] In the described example, an integrated semiconductor transistor chip for a buck converter includes high-side transistors formed on the chip and includes laterally diffused metal oxide semiconductor (LDMOS) transistors. Additionally, the chip includes low-side transistors formed on the chip and including source-down metal oxide semiconductor field effect transistors (MOSFETs). In addition, the chip includes: a substrate for serving as the source of the low-side transistor; and an n-doped well for connecting the high-side transistor to the source of the low-side...

Claims

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Application Information

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IPC IPC(8): H01L27/092H01L21/8238
CPCH02M3/1588H01L21/823493H01L21/26533H01L29/402H01L29/4175H01L29/7835H01L27/1207H01L29/0649H01L29/1045H01L29/1087H01L21/761H01L27/088H01L29/7816Y02B70/10
Inventor 王军F·拜奥齐林海安
Owner TEXAS INSTR INC