A preparation process of isosceles ladder light-emitting diode

Abstract

The invention discloses a preparation technology of an isosceles trapezoid light-emitting diode. The light-emitting diode with an isosceles trapezoid section is manufactured through an angle complementing mode; the inclination angle of the isosceles trapezoid section is firstly determined through the cooperation plasticity of light blocking layers and DBR barrier layers; and a second N-GaN layer, an active layer and a P-GaN space grow in a gap between the DBR barrier layers after the light blocking layers are removed, so that the formed angle of the light-emitting diode is determined by the angles of the light blocking layers; the angle of the light-emitting diode can be controlled only by controlling the angles of the light blocking layers; and the angle needs to be controlled by combining parameters of preset height and width of an LED lamp and the like. The exit angle of reflected light can be accurately controlled according to the width and the height of the light-emitting diode; and a light-emitting structure at different angles is achieved, so that the light loss is avoided; and the outlet light quantity is improved.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a preparation process of an isosceles ladder light emitting diode. Background technique [0002] Light-emitting diodes, also known as LED chips, in order to avoid affecting the luminous efficiency due to the occupation of the light-emitting area by the electrodes in the front-mounted LED chips, chip developers designed a flip-chip structure, that is, the front-mounted chip is turned upside down, so that the light excited by the light-emitting layer is directly from the electrodes. The other side is sent out (the substrate is finally peeled off, and the chip material is transparent). At the same time, a structure that is convenient for LED packaging factory wire bonding is designed for flip chip. Therefore, the entire chip is called flip chip (FlipChip). High-power chips are often used. The advantages of flip-chip LED chips are: first, it can be used with high curre...

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Problems solved by technology

[0003] The light of the LED flip chip needs to be extracted from the back. In order to improve the efficiency of light extraction, the front of the chip is equipped with a light reflective layer. In the existing flip chip, a lot of light will undergo multiple total reflections on the reflective layer of the chip. If an isosceles trapezoidal chip structure is formed on the substrate, the total reflection of light will be reduced, but when preparing such a chip, the angle (the inclination angle of both sides of the isosceles trapezoid) is not easy to control, and part of the light is still will be lost inside the chip

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