LED chip and manufacturing method therefor

Abstract

The invention provides an LED chip and a manufacturing method therefor. The LED chip comprises a substrate, an N type semiconductor layer, a light emitting layer, a P type semiconductor layer, a current barrier layer, a current diffusion layer, a P electrode, an expansion electrode, and an N electrode, wherein the N type semiconductor layer is positioned on the substrate; an N type table surface is formed on the N type semiconductor layer; the light emitting layer is positioned on the N type semiconductor layer; the P type semiconductor layer is positioned on the light emitting layer; the current barrier layer is positioned on the P type semiconductor layer; the current diffusion layer is positioned on the P type semiconductor layer and covers the current barrier layer; the P electrode is positioned above the P type semiconductor layer which is not covered by the current barrier layer and the current diffusion layer, and is electrically connected with the P type semiconductor layer; the expansion electrode is positioned above the current diffusion layer and electrically connected with the P electrode; and the N electrode is positioned on an N type table surface and electrically connected with the N type semiconductor layer. According to the LED chip, the current barrier layer and the current diffusion layer are not arranged below the P electrode; the P electrode is directly formed on the P type semiconductor layer, so that the stability of the chip electrode is improved; and in addition, the luminance of the chip can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor chips, in particular to an LED chip and a manufacturing method thereof. Background technique [0002] A light-emitting diode (Light-Emitting Diode, LED) is a semiconductor electronic component that can emit light. This electronic component appeared as early as 1962. In the early days, it could only emit red light with low luminosity. Later, other monochromatic light versions were developed. Today, the light that can be emitted has covered visible light, infrared rays and ultraviolet rays, and the luminosity has also increased to a considerable extent. of luminosity. Because of its energy saving, environmental protection, safety, long life, low power consumption, low heat, high brightness, waterproof, miniature, shockproof, easy dimming, concentrated beam, easy maintenance, etc., it can be widely used in various indications, displays, decorations , backlight, general lighting and other fields. [00...

AI Technical Summary

Problems solved by technology

However, when the thickness of the ITO layer formed by magnetron sputtering is less than 600 angstroms, the surface roughness of the ITO layer after annealing is very low, resulting in poor adhesion between the TCL layer and the P electrode, and the entire P electrode without digging holes is easy to fall off , the edge of the hole-digging P electrode is easy to fall off

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