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Patterned Photoresist Removal

A patterning and pattern transfer technology, applied in the semiconductor field, can solve the problem that the patterned photoresist layer is difficult to remove

Active Publication Date: 2020-04-24
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

New technologies such as extreme ultraviolet (EUV) lithography have allowed scaling to continue, but significant difficulties still need to be overcome
For example, providing a patterned photoresist layer with sufficient structural integrity to withstand one or more etchs in order to perform sequential process steps may result in the patterned photoresist layer being difficult to remove from a semiconductor element wafer

Method used

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  • Patterned Photoresist Removal
  • Patterned Photoresist Removal
  • Patterned Photoresist Removal

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Embodiment Construction

[0021] It should be understood that the following disclosure provides several different embodiments or examples for realizing different features of each embodiment. To simplify the present disclosure, specific examples of devices and arrangements are described below. Of course, these are merely examples and are not intended to be limiting. In addition, the present invention may repeat reference numerals and / or letters in each example. This repetition is for simplicity and clarity and does not in itself imply a relationship between the various embodiments and / or arrangements discussed.

[0022] It should be understood that the various process steps and / or features of the elements may only be briefly described, which various process steps and / or features are well known to those of ordinary skill in the art. Furthermore, additional process steps or features may be added, and some of the below-described process steps or features may be removed or changed, while still implementin...

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PUM

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Abstract

Methods for performing a photolithographic process are disclosed. The methods facilitate the removal of photosensitive from a wafer after the photosensitive has been used as an etch mask. The photosensitive may be a negative tone photosensitive that undergoes a cross-linking process on exposure to electromagnetic energy. By limiting the cross-linking through a reduced post-exposure bake temperature and / or through reduced cross-linker loading, the photoresist, or at least a portion thereof, may have a reduced solvent strip resistance. Because of the reduced solvent strip resistance, a portion of the photosensitive may be removed using a solvent strip. After the solvent strip, a dry etch may be performed to remove remaining portions of the photoresist.

Description

technical field [0001] The present invention relates to semiconductors, and in particular to semiconductor photolithography. Background technique [0002] The semiconductor component industry has experienced rapid growth. In the process of component evolution, the functional density of semiconductor components generally increases while the feature size decreases. This scaled-down process typically provides benefits through increased production efficiency and reduced associated costs. This scaling down also increases the complexity of designing and manufacturing these components. [0003] One of the many techniques used to produce semiconductor components is photolithographic patterning or photolithography. Photolithography is a process in which a pattern created on a photomask can be transferred to a layer of photoreactive material (photoresist or PR), which, when developed, includes pattern. Thereafter, in an etching process, the patterned photoresist layer may be used...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42H01L21/311
CPCG03F7/42H01L21/31133G03F7/038G03F7/38G03F7/40G03F7/422
Inventor 郑雅玲张庆裕陈建志
Owner TAIWAN SEMICON MFG CO LTD