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Structure and Formation Method of Semiconductor Device Structure

A device structure and semiconductor technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of shrinking component size, difficult implementation of manufacturing process, increasing processing and manufacturing IC complexity, etc.

Active Publication Date: 2021-09-14
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, these advances have increased the complexity of handling and manufacturing IC
Manufacturing processes continue to become difficult as component sizes continue to shrink
Therefore, it is a challenge to form reliable semiconductor devices at increasingly smaller dimensions

Method used

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  • Structure and Formation Method of Semiconductor Device Structure
  • Structure and Formation Method of Semiconductor Device Structure
  • Structure and Formation Method of Semiconductor Device Structure

Examples

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Embodiment Construction

[0014] The following disclosure provides many different embodiments or examples for implementing the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting. For example, in the following description, forming a first component over or on a second component may include embodiments in which the first component and the second component are in direct contact, and may include additional components formed between the first component and the second component An embodiment such that the first part and the second part are not in direct contact. In addition, the present invention may repeat reference numerals and characters in various instances. This repetition is for the purposes of simplicity and clarity, and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0015] Also, for ea...

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PUM

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Abstract

Structures and methods of forming semiconductor device structures are provided. A semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes a gate stack covering a portion of the fin structure, and the gate stack includes a work function layer and a metal fill over the work function layer. The semiconductor device structure also includes an isolation element over the semiconductor substrate and adjacent to the gate stack. The isolation element is in direct contact with the work function layer and the metal fill. Embodiments of the present invention relate to structures and methods of forming semiconductor device structures.

Description

[0001] Cross References to Related Applications [0002] This application is related to the co-delegated and co-assigned U.S. Patent Application No. 14725555 (applicant's attorney docket number: P20150165US00) entitled "Structure and formation method of semiconductor device structure" filed on May 29, 2015, the entire contents of which Incorporated herein by reference. technical field [0003] Embodiments of the present invention relate to structures and methods of forming semiconductor device structures. Background technique [0004] The semiconductor integrated circuit (IC) industry has experienced rapid development. Technological advances in IC materials and design have produced generations of ICs. Each generation of ICs has smaller and more complex circuits than the previous generation. [0005] In the course of IC evolution, feature density (ie, the number of interconnected devices per chip area) has typically increased while geometry size (ie, the smallest component...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/423H01L29/78H01L21/336H01L21/28
CPCH01L29/4236H01L29/66795H01L29/785H01L29/4966H01L29/66545H01L21/823878H01L21/823821H01L27/0924H01L21/823842H01L21/76224H01L27/0922H01L29/42372H01L29/0653H01L21/31111H01L21/823814H01L21/823857H01L29/0847H01L29/1608H01L29/161H01L29/165H01L29/24H01L29/267H01L29/517H01L29/66553H01L29/7848H01L29/7851
Inventor 张哲诚庄瑞萍吕祯祥陈威廷刘又诚
Owner TAIWAN SEMICON MFG CO LTD
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