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A method for inhibiting perovskite Auger recombination using two-dimensional materials

A technology of two-dimensional materials and Auger recombination, applied in the fields of titanium compounds, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve problems such as performance discussion and research, achieve easy operation and verification, simple methods, and improve efficiency Effect

Inactive Publication Date: 2019-01-08
HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the lasing behavior of perovskites, especially at high pump intensities, has rarely been discussed and studied.

Method used

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  • A method for inhibiting perovskite Auger recombination using two-dimensional materials
  • A method for inhibiting perovskite Auger recombination using two-dimensional materials
  • A method for inhibiting perovskite Auger recombination using two-dimensional materials

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Experimental program
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Embodiment

[0031] First, we synthesized perovskite micron-scale rod-like structures by chemical methods. The SEM pictures of the synthesized results are as follows: figure 1 As shown, of course chemical synthesis has the disadvantage of randomness, but in this field of view, due to the control of synthesis conditions, most of them are the rod-like structures we need, and at the same time, they are basically the same in size. This satisfies the necessary conditions for our later experiments to be repeatable.

[0032] For example: the specific achievable chemical parameter methods are as follows

[0033] Weigh a certain mass of methyl ammonium bromide (CH 3 NH 3 Br) and lead bromide (PbBr 2 ) solid powder, respectively dissolved in two parts of dimethylformamide (DNF) solutions of corresponding volumes prepared in advance, prepared into two parts of methyl ammonium bromide (CH 3 NH 3 Br) solution and lead bromide (PbBr 2 ) solution. After the two solutions were mixed and reacted, th...

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Abstract

The invention belongs to the field of optoelectronic technology materials, and specifically relates to a method for inhibiting perovskite Auger recombination by using two-dimensional materials, including: first chemically synthesizing perovskite micron-scale rod-shaped structures; Transferred graphene, a layer of two-dimensional material graphene is added under the perovskite. For the Raman spectrum of graphene, the peaks of the G peak and the 2D peak are both greater than 0.8×10k a.u. It lays the foundation for the application of reducing Auger recombination and increasing the output efficiency of laser in the field of semiconductor lasers, and provides ideas for the application of improving the efficiency of solar cells and OLED and other optoelectronic fields.

Description

technical field [0001] The invention belongs to the field of optoelectronic technology, and in particular relates to a method for suppressing perovskite Auger recombination by using two-dimensional materials. Background technique [0002] The research on lead halide perovskite mainly focuses on its lasing behavior. The low-threshold, high-Q properties of perovskite nanorods have been extensively demonstrated. However, studies on the performance of perovskite microlasers at high excitation energies are relatively scarce. [0003] In the case of high pump density, using two-dimensional materials, such as graphene, to prepare perovskite / graphene systems, compared with pure perovskite microlasers, the output intensity of light is increased by 4 times and the threshold value is reduced. nearly 20%. At this time, the perovskite microlaser also shows a parallel or even negative energy slope, and the entire output energy is therefore saturated. [0004] Explain the increase in o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/46C01G23/00C01B32/184H01L51/54
CPCC01G23/006C01P2004/03C01P2002/82C01P2004/80H10K85/00Y02E10/549
Inventor 肖淑敏张晨朱茂霞宋清海
Owner HARBIN INST OF TECH SHENZHEN GRADUATE SCHOOL