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Wet-peelable silicon-containing antireflective agents

A technology of siloxane and polymer used in the field of anti-reflective composition, which can solve the problem of not providing etch resistance

Inactive Publication Date: 2019-07-23
ROHM & HAAS ELECTRONICS MATERIALS LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the silicon-containing antireflective layer in U.S. Patent Application Publication No. 2014 / 0186774 may be acid strippable, such silicon-containing antireflective layer may not provide the desired properties during pattern transfer due to the lack of Si-O-Si bonds. Requires etch resistance

Method used

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  • Wet-peelable silicon-containing antireflective agents
  • Wet-peelable silicon-containing antireflective agents
  • Wet-peelable silicon-containing antireflective agents

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0049] Example 1: Preparation of Polymer 1. 3-neck round bottom flask equipped with thermocouple, magnetic stir bar, N 2 Feed lines, bubbler, and heated oil bath. Dihydrofuran-2,5-diketopropyltriethoxysilane (9.13g, 30mmol), mercaptopropyltrimethoxysilane (5.89g, 30mmol), tetramethyldiethoxydisiloxane (16.68 g, 75 mmol) and diphenyldiethoxysilane (4.08 g, 15 mmol) were measured by weight and charged into a reactor using PGMEA (10 g, 0.32 volume relative to total monomer weight) to facilitate transfer . In separate vessels, acetic acid (0.575 g, 9.57 mmol) and deionized water (14.04 g, 788 mmol) were measured by weight and mixed together. The resulting aqueous acetic acid solution was charged to the reactor at ambient temperature. A biphasic mixture was obtained after the addition. The batch was stirred for 30 minutes at ambient temperature. A slight exothermic effect was observed (batch temperature increased from 22°C to 26°C and stabilized during the first 15 minutes of...

example 2

[0053] Example 2: Preparation of Polymer 2. 3-neck round bottom flask equipped with thermocouple, magnetic stir bar, N 2Feed lines, bubbler, and heated oil bath. Dihydrofuran-2,5-dioxopropyltriethoxysilane (9.13g, 30mmol), mercaptopropyltrimethoxysilane (5.89g, 30mmol), methylmercaptopropyldiethoxysilane ( 13.53 g, 75 mmol) and methylphenyldiethoxysilane (2.73 g, 15 mmol) were measured by weight and charged to the reactor using PGMEA (10 g, 0.32 volume relative to total monomer weight) to facilitate transfer . In a separate vessel, acetic acid (0.575 g, 9.57 mmol) and deionized water (14.2 g, 788 mmol) were measured by weight and mixed together. The resulting aqueous acetic acid solution was charged to the reactor at ambient temperature. A biphasic mixture was obtained after the addition. The batch was stirred for 30 minutes at ambient temperature. A slight exothermic effect was observed where the batch temperature increased from 22 to 26°C and stabilized during the fir...

example 3

[0057] Example 3: Preparation of Polymer 3. The procedure of Example 1 was repeated, but wherein 30 mmol of methylglycidyloxypropyldiethoxysilane was used instead of mercaptopropyltrimethoxysilane and an appropriate amount of methylphenyldimethoxysilane was used instead of diphenyl Diethoxysilane to provide polymer 3 shown below, where "R" refers to ethyl, methyl or H. Polymer 3 M w is 1376 Da and has a silicon content of 26% by weight.

[0058] Polymer 3:

[0059]

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Abstract

Wet-strippable antireflective compositions comprising one or more silicon-containing polymers that are free of Q-monomers and hydridosilanes as polymerized units are provided. These compositions are useful in the manufacture of various electronic devices.

Description

technical field [0001] The present invention relates generally to antireflective compositions and methods of using them, and more particularly to silicon-containing antireflective compositions and their use in the manufacture of electronic devices. Background technique [0002] In conventional photolithographic methods, a resist pattern is used as a mask for transferring the pattern to the substrate by a suitable etching method, such as by reactive ion etching (RIE). The continued reduction in the thickness of the resist used makes the resist pattern unsuitable as a mask for pattern transfer by the RIE method. Therefore, alternating methods have been developed using three, four or more layers as masks for pattern transfer. For example, in a three-layer approach, a silicon-containing antireflective layer is disposed between the bottom layer / organic planarization layer and the resist layer. Due to the alternating selectivity of these layers to fluorine and oxygen-containing ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08G77/14C08G77/18C08G77/26C08G77/28G03F7/20
CPCC08G77/14C08G77/18C08G77/26C08G77/28G03F7/20C08G77/80C09D183/06C09D183/08G03F7/0752G03F7/091C08G77/04C08G77/20C08L83/04G03F7/0043G03F7/168G03F7/32
Inventor O·昂加依C·卡特勒M·李S·山田J·卡梅伦
Owner ROHM & HAAS ELECTRONICS MATERIALS LLC