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Re-crystallized silicon carbide kiln and manufacturing method thereof

A technology for recrystallizing silicon carbide and kilns, which is applied in the direction of furnaces, furnace types, ceramic products, etc. It can solve the problems of difficult to meet the use, cracking and fracture, and decrease in oxidation resistance, and achieve long service life, increased fluidity, and cooling. short time effect

Inactive Publication Date: 2016-12-21
佛山市盈通黑金碳材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The silicon carbide particle product contains a lot of free silicon, about 8-15% of free silicon, and its use temperature is lower than 1400°C, and the best use temperature is not more than 1300°C. The strength, hardness, and corrosion resistance of the product exceed this temperature The resistance to oxidation has dropped significantly, resulting in product deformation, oxidation, cracking and fracture, making it difficult to meet the needs of use

Method used

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  • Re-crystallized silicon carbide kiln and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] The preparation process of the porous recrystallized silicon carbide column includes the following steps,

[0039] (1) Uniformly mix silicon carbide powder with a purity of not less than 95% with silicon powder and carbon powder, then add a binder and mix evenly to obtain a mixture; the weight percentage of the material is:

[0040] 1000-1100 mesh silicon carbide powder 35%;

[0041] 100-300 mesh silicon powder 32%;

[0042] 100-300 mesh toner 32%;

[0043] Binder 1%;

[0044] (2) adding the above-mentioned mixture into the mold and extruding to obtain the column body;

[0045] (3) Place the column blank in a sintering furnace, connect graphite electrodes at both ends of the column blank, and use a mixed powder of carbon powder and silicon carbide powder on the periphery of the column blank connected with the graphite electrode Filling, to isolate air and create a protective atmosphere;

[0046] (4) The two graphite electrodes are energized, and the conductivity of...

Embodiment 2

[0063] In this embodiment, the preparation process of the porous recrystallized silicon carbide column includes the following steps,

[0064] (1) Uniformly mix silicon carbide powder with a purity of not less than 95% with silicon powder and carbon powder, then add a binder and mix evenly to obtain a mixture; the weight percentage of the material is:

[0065] 1000-1100 mesh silicon carbide powder 36%;

[0066] 100-300 mesh silicon powder 31%;

[0067] 100-300 mesh toner 31%;

[0068] Binder 2%;

[0069] (2) adding the above-mentioned mixture into the mold and extruding to obtain the column body;

[0070] (3) Place the column blank in a sintering furnace, connect graphite electrodes at both ends of the column blank, and use a mixed powder of carbon powder and silicon carbide powder on the periphery of the column blank connected with the graphite electrode Filling, to isolate air and create a protective atmosphere;

[0071] (4) The two graphite electrodes are energized, and...

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Abstract

The invention discloses a recrystallized silicon carbide kiln, which comprises a furnace body and a heating device arranged inside. Distributed porous recrystallized silicon carbide columns, connected upper, middle and lower layer carriers supported on multiple recrystallized silicon carbide columns, the carrier is composed of recrystallized materials connected between two adjacent porous recrystallized silicon carbide columns The silicon carbide connecting rods and the recrystallized silicon carbide support rods fixed between the recrystallized silicon carbide connecting rods on opposite sides, a plurality of recrystallized silicon carbide support rods are arranged in parallel with intervals between them. The structure of the invention is simple, and compared with the same type of products, it has good high-temperature strength, thermal shock resistance, oxidation resistance and thermal conductivity, long service life and superior performance.

Description

technical field [0001] The invention relates to the technical field of material preparation, in particular to a recrystallized silicon carbide furnace and a preparation method thereof. Background technique [0002] There are many kinds of silicon carbide products, which are widely used in chemical industry, building materials ceramic industry, powder metallurgy industry, steel industry, aluminum industry, copper industry, non-ferrous metal smelting industry, aerospace industry and so on. Among them, the non-ferrous metal smelting industry uses silicon carbide as a high-temperature indirect heating material with high temperature resistance, high strength, good thermal conductivity, and impact resistance, such as hard pot distillation furnaces, aluminum electrolytic cells, and copper melting furnace linings. The building materials and ceramics industry uses silicon carbide's good thermal conductivity and high thermal strength to manufacture thin-plate kilns, etc., which can no...

Claims

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Application Information

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IPC IPC(8): F27B17/00C04B35/565C04B35/65C04B38/00
CPCF27B17/00C04B35/573C04B35/65C04B38/0022C04B2235/422C04B2235/428C04B2235/602C04B2235/666
Inventor 麦鹤瀛
Owner 佛山市盈通黑金碳材料股份有限公司