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MEMS device as well as preparation method and electronic device thereof

A technology of electronic devices and devices, which is applied in the field of MEMS devices and their preparation, can solve the problems of affecting bonding performance, chamfering, and the area of ​​bonding surface contact becomes smaller, so as to improve product yield, increase quality, and improve the effect Effect

Active Publication Date: 2017-01-25
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the graphics on the wafer will affect the effect of CMP planarization
For example, chamfering occurs during the CMP process, and the contact area of ​​the bonding surface becomes smaller, which affects the bonding performance

Method used

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  • MEMS device as well as preparation method and electronic device thereof
  • MEMS device as well as preparation method and electronic device thereof
  • MEMS device as well as preparation method and electronic device thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] In order to solve the problems existing in the prior art, the present invention provides a kind of preparation method of MEMS device, below in conjunction with attached Figures 1a-1f The method is described further.

[0038] Firstly, step 101 is performed, a bottom wafer 101 is provided, and a first bonding material layer 102 is formed on the front surface of the bottom wafer 101 .

[0039] Specifically, as Figure 1a As shown, wherein the bottom wafer 201 includes at least a semiconductor substrate, and the semiconductor substrate can be at least one of the materials mentioned below: silicon, silicon-on-insulator (SOI), silicon-on-insulator (SSOI) ), silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI), etc.

[0040] Form the first bonding material layer 102 on the front side of the bottom wafer 201, specifically the deposition method of the first bonding material layer 102 can be chemical vapor depositi...

Embodiment 2

[0088]The present invention also provides a MEMS device, which is prepared by the method in Example 1, and the MEMS device adjusts the CMP at The polish rate (PolishRate) at the sharp corners of the pattern. Makes the CMP smoother. The bonding area is improved, which increases the quality of bonding. Solved the problems in the production process and improved the product yield.

Embodiment 3

[0090] The present invention also provides an electronic device, including the MEMS device described in Embodiment 2. Wherein, the semiconductor device is the MEMS device described in Example 2, or the MEMS device obtained according to the preparation method described in Example 1.

[0091] The electronic device of this embodiment can be any electronic product or equipment such as mobile phone, tablet computer, notebook computer, netbook, game console, TV set, VCD, DVD, navigator, camera, video recorder, voice recorder, MP3, MP4, PSP, etc. , can also be any intermediate product including the MEMS device. The electronic device of the embodiment of the present invention has better performance due to the use of the above-mentioned MEMS device.

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Abstract

The invention relates to an MEMS (Micro Electro Mechanical System) device as well as a preparation method and an electronic device thereof. The preparation method comprises the following steps: S1, providing a bottom wafer, and forming a first bonding material layer on the front surface of the bottom wafer; S2, patterning the first bonding material layer so as to form a plurality of openings in the first bonding material layer and exposing the bottom wafer; S3, depositing a second bonding material layer to fill the openings, wherein the second bonding material layer and the first bonding material layer have different planarization removal speeds; S4, patterning the bottom wafer so as to form a target pattern, wherein the second bonding material layer is positioned on the edge of the target pattern; S5, implementing a planarization step; S6, bonding the bottom wafer with a top wafer. The MEMS device has the advantages that firstly, the effect of CMP is improved, and the bonding quality is improved; secondly, problems caused in the production process can be solved, and the product yield can be increased.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular, the invention relates to a MEMS device, a preparation method thereof, and an electronic device. Background technique [0002] With the continuous development of semiconductor technology, in the market of sensor (motion sensor) products, smart phones, integrated CMOS and micro-electromechanical system (MEMS) devices have increasingly become the most mainstream and advanced technology, and with the update of technology, The development direction of this kind of transmission sensor products is smaller size, high-quality electrical performance and lower loss. [0003] Among them, micro-electro-mechanical systems (MEMS) have obvious advantages in terms of volume, power consumption, weight, and price. So far, various sensors have been developed, such as pressure sensors, acceleration sensors, inertial sensors, and other sensors. [0004] During the preparation process of the MEMS device, s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00B81B7/02
Inventor 郑超
Owner SEMICON MFG INT (SHANGHAI) CORP