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Time resolution photoluminescence simulation method of compound semiconductor double heterojunction structure

A photoluminescence spectroscopy and double heterojunction technology, applied in the direction of material excitation analysis, etc., can solve the problems of non-local quantum tunneling without consideration of heterojunction surface defects, and reduce the accuracy of numerical simulation methods

Active Publication Date: 2017-02-01
SHANGHAI INST OF SPACE POWER SOURCES
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

With the development of related experiments, the research on the time-resolved photoluminescence spectrum full numerical analysis method of the compound semiconductor double heterojunction structure has been carried out, such as the combination lifetime characteristic fitting in the compound single-junction GaAs solar cell (S.M.Durbin, J.L.Gray, "Numericalmodelingofphotonrecyclingin high efficiency GaAs solar cells" inProc.22nd IEEE Photovoltaic Spec.Conf., Las Vegas, NV, USA, 1991, pp.188–191.), however, the above numerical analysis does not consider heterojunction defects, The influence of nonlocal quantum tunneling across heterojunction surfaces, internal and interface defects of different materials in different material layers, and the characteristics of testing instruments on the final numerical calculation results greatly reduces the accuracy of numerical simulation methods

Method used

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  • Time resolution photoluminescence simulation method of compound semiconductor double heterojunction structure
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  • Time resolution photoluminescence simulation method of compound semiconductor double heterojunction structure

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Embodiment 1

[0144] The structure for the purpose of obtaining the recombination rate of the back field of the GaInP sub-cell is taken as an example, which includes a GaAs buffer layer, an AlGaInP lower back field, a GaInP active layer and an AlGaInP upper back field layer from bottom to top. The structure is grown on the n-type GaAs substrate by low-pressure metal-organic chemical vapor deposition equipment, and the minority carrier lifetime is tested by time-resolved spectroscopy, ranging from 0.5ns to 10ns, which is basically consistent with the lifetime obtained by this simulation method The method inversely deduces the recombination mechanism that dominates the lifetime.

Embodiment 2

[0146] Take the structure for the purpose of obtaining the back field recombination rate of the InGaAs subcell of 1eV as an example, which includes an InAlGaAs strained buffer layer, a GaInP lower back field, an InGaAs active layer, and a GaInP upper back field layer from bottom to top. The structure is grown on the n-type GaAs substrate by low-pressure metal-organic chemical vapor deposition equipment, and the minority carrier lifetime is tested by time-resolved spectroscopy, ranging from 10ns to 50ns, which is basically consistent with the lifetime obtained by this simulation method. The recombination mechanism that dominates the lifespan is reversed.

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Abstract

The invention relates to a time resolution photoluminescence simulation method of a compound semiconductor double heterojunction structure. The time resolution photoluminescence simulation method comprises the following steps of: S1, carrying out time-dependent numeric disperse on a time-dependent semiconductor basic differential equation of carrier transport characteristics in a leading compound semiconductor structure; S2, in the presence and absence of illumination in the compound semiconductor double heterojunction structure, establishing a numerical simulation method for carrier quasi-fermi distribution momentary evolution, and carrying out optimization iteration; and S3, establishing a method capable of simulating non-local quantum tunneling photoluminescence momentary evolution of different defect parameters and interfaces in the compound semiconductor heterojunction structure. The method can comprehensively consider the influences of heterojunction interface defects, non-local quantum tunneling spanning a heterojunction interface, internal defects and interface defects of different materials in different material layers as well as test instrument characteristic on final numerical results.

Description

technical field [0001] The invention relates to a time-resolved photoluminescence spectrum simulation method, in particular to a method for numerically simulating the time-resolved photoluminescence spectrum of a compound semiconductor double heterojunction structure. Background technique [0002] At present, the compound semiconductor double heterojunction structure is widely used in semiconductor devices such as microwave, photoelectric conversion, detection, light emission and absorption. Understanding the carrier transport and effective life of the double heterojunction in these device structures is of great importance to the design and development of device structures. Analysis of test results is instructive. Time-resolved photoluminescence spectroscopy is to analyze the influence of material defects in different layers and heterojunction interface defects on carrier transport through the evolution of photoluminescence spectra of semiconductor structures over time. The...

Claims

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Application Information

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IPC IPC(8): G01N21/63
CPCG01N21/63
Inventor 张玮李欣益陆宏波张华辉杨丞陈杰张梦炎张建琴郑奕
Owner SHANGHAI INST OF SPACE POWER SOURCES