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High removal rate and low defectivity cmp composition with selectivity to oxide better than polysilicon and nitride

A polishing composition and polymer technology, applied in the direction of polishing composition containing abrasives, chemical instruments and methods, and other chemical processes, can solve problems such as isolation failure, oxide loss, and impact on device manufacturing

Active Publication Date: 2019-02-15
CMC材料有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dishing is undesirable because recessing of substrate features can adversely affect device fabrication by causing transistors and transistor components (assemblies) to fail to isolate from each other, thereby causing short circuits
Additionally, over-polishing of the substrate can also lead to oxide loss and expose the underlying oxide to damage from polishing or chemical activity, which adversely affects device quality and performance

Method used

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  • High removal rate and low defectivity cmp composition with selectivity to oxide better than polysilicon and nitride
  • High removal rate and low defectivity cmp composition with selectivity to oxide better than polysilicon and nitride
  • High removal rate and low defectivity cmp composition with selectivity to oxide better than polysilicon and nitride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0095] Silicon wafers comprising TEOS and polysilicon were polished using Polishing Compositions 1A-1M under the same conditions. The polishing compositions were obtained by combining equal volumes of abrasive formulations and additive formulations described in Tables 1 and 2 in the combinations illustrated in Table 3. The pH of each of Polishing Compositions 1A-1M was adjusted to 4. Each of Polishing Compositions 1A-1M contained 0.4% by weight wet-process ceria.

[0096] After polishing, the removal rates of TEOS and polysilicon were determined, and the selectivity of TEOS to polysilicon was calculated. The results are illustrated in Table 3.

[0097] table 3

[0098]

[0099] As evident from the results illustrated in Table 3, polishing compositions 1C-1H, 1K, and 1M (invention) containing polymers of Formula I exhibited TEOS:polysilicon selectivities of about 105 to 502. Polishing Composition II exhibited a TEOS:polysilicon selectivity of about 47, but a TEOS removal...

Embodiment 2

[0101] This example demonstrates the reduced variability in polysilicon removal rate exhibited by the inventive polishing compositions according to embodiments of the invention.

[0102] Four different polishing compositions (i.e., Polishing Compositions 2A-2D) were used to polish high density plasma ("HDP") oxide-capped silicon, TEOS-capped silicon, silicon nitride-capped silicon, and a separate substrate of silicon covered with polysilicon. Polishing Composition 2A (invention) comprised equal volumes of wet-process ceria formulation WPC1 diluted 1:1.7 with water and additive formulation F3 diluted 1:1.5 with water to provide 0.23% by weight of wet-process ceria . Polishing Composition 2B (invention) comprised equal volumes of wet-process ceria formulation WPC1 and additive formulation F3 to provide 0.4 wt% wet-process ceria. Polishing Composition 2C (comparative) comprised equal volumes of wet-process ceria formulation WPC1 diluted 1:1.7 with water and additive formulation...

Embodiment 3

[0108] This example demonstrates the effect on dishing and erosion and on polysilicon loss and oxide loss observed with a polishing composition comprising wet-process ceria and a polymer of Formula I according to an embodiment of the invention.

[0109] Three different polishing compositions (i.e., Polishing Compositions 3A-3C) were used to polish individual patterned substrates comprising silicon oxide capped 100 micron and 900 micron polysilicon features (approximately 2200 Angstrom thick features) were covered with approximately 1300 Angstrom oxide on the substrate. Polishing Composition 3A (comparative) contained equal volumes of a mixture of wet-process ceria formulation WPC1 and additive formulation F9. Polishing Composition 3B (comparative) contained equal volumes of a mixture of wet-process ceria formulation WPC1 and additive formulation F1. Polishing Composition 3C (invention) comprised equal volumes of a mixture of wet-process ceria formulation WPC1 and additive for...

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Abstract

The present invention provides a chemical mechanical polishing composition, which contains: ceria abrasive; and formula I polymer, in said formula I, X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3 and R4 , and m are as defined herein; and water, wherein the polishing composition has a pH of about 1 to about 4.5. The present invention also provides methods of chemically mechanically polishing a substrate using the chemical mechanical polishing composition of the present invention. Typically, the substrate contains silicon oxide, silicon nitride, and / or polysilicon.

Description

Background technique [0001] Compositions and methods for planarizing or polishing substrate surfaces are well known in the art. Polishing compositions (also known as polishing slurries) typically contain abrasive materials in a liquid carrier and are applied to a surface by contacting the surface with a polishing pad saturated with the polishing composition. Typical abrasive materials include silica, cerium oxide, aluminum oxide, zirconium oxide, and tin oxide. Polishing compositions are typically used in conjunction with polishing pads, such as polishing cloths or discs. Instead of being suspended in the polishing composition, or in addition to being suspended in the polishing composition, the abrasive material may be introduced into the polishing pad. [0002] As a method for isolating elements of semiconductor devices, much attention has been drawn to a shallow trench isolation (STI) process in which a silicon nitride layer is formed on a silicon substrate, shallow trench...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K3/14
CPCC09K3/1463H01L21/31053C09G1/02H01L21/3212
Inventor 李常怡K.多克里贾仁合J.戴萨德
Owner CMC材料有限责任公司