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Photoelectron semiconductor device manufacturing method

A technology for optoelectronic semiconductors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as failure, difficulty in capturing, deviation of detection results, etc., to improve accuracy, ensure reliability, and prevent mutual the effect of interference

Inactive Publication Date: 2017-02-22
张为凤
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the signal of the semiconductor chip that emits radiation will affect the semiconductor chip that detects radiation, resulting in deviation or failure of the detection results, and generally, the signal that emits radiation is stronger, while the signal that is fed back to detect radiation is weaker and difficult to capture

Method used

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  • Photoelectron semiconductor device manufacturing method
  • Photoelectron semiconductor device manufacturing method
  • Photoelectron semiconductor device manufacturing method

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Embodiment Construction

[0018] see figure 1 and 2 , the optoelectronic semiconductor device according to the invention has an injection-molded housing, a radiation-emitting semiconductor chip 2 and a plurality of radiation-detecting semiconductor chips 3 , wherein a first cavity and a second cavity are formed in the injection-molded housing, the first A cavity is a cylindrical cavity surrounded by the inner wall 4 and the bottom wall, and the second cavity is an annular cavity surrounding the first cavity surrounded by the outer wall 5 and the bottom wall; A plurality of electrically conductive carriers 1 of a radiation-emitting semiconductor chip 2 and a plurality of radiation-detecting semiconductor chips 3 as well as a plurality of electrode pads 10 .

[0019] The radiation-emitting semiconductor chip 2 has an active layer suitable for generating radiation and the radiation-emitting semiconductor chip 2 is arranged in the first chamber by carrying a conductive carrier 1 electrically connected in ...

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Abstract

The invention provides a photoelectron semiconductor device manufacturing method. The method includes that a temporary carrier plate is provided, and a plurality of conductive carrier pads and a plurality of electrode slices are arranged on the temporary carrier plate; an injection moulding housing is formed by injection moulding materials, a semiconductor chip for emitting radiation and a plurality of semiconductor chips for detecting radiation are fixed on the plurality of corresponding conductive carrier pads, the semiconductor chip for emitting radiation is provided with an active layer being suitable for generating radiation and is arranged in a first cavity, the plurality of semiconductor chips for detecting radiation has active layers being suitable for generating radiation and are arranged in a second cavity, and the plurality of semiconductor chips for detecting radiation uniformly encircle the semiconductor chip for emitting radiation.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a method for manufacturing an optoelectronic device with an injection molded housing, a radiation-emitting semiconductor chip and a radiation-detecting semiconductor chip. Background technique [0002] It is known to design a component with a radiation-emitting semiconductor chip and a radiation-detecting semiconductor chip. However, the devices generally have semiconductor chips arranged in separate housings and spaced apart from one another, for example on a circuit board. However, the signal of the radiation-emitting semiconductor chip will affect the radiation-detecting semiconductor chip, resulting in deviation or failure of the detection result, and generally, the radiation-emitting signal is strong, while the feedback signal of the detection radiation is weak and difficult to capture. Contents of the invention [0003] Based on solving the problems in the above pac...

Claims

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Application Information

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IPC IPC(8): H01L21/50
CPCH01L21/50
Inventor 张为凤
Owner 张为凤
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