Semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as inability to meet requirements
Active Publication Date: 2019-03-26
TAIWAN SEMICON MFG CO LTD
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- Abstract
- Description
- Claims
- Application Information
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Problems solved by technology
While existing IC device fabrication methods are often adequate for their intended purpose, they are not always fully compliant in all respects
For example, the development of improved dielectric and metal interconnection structure faces higher challenges
Method used
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Embodiment Construction
[0078] It is to be appreciated that the following disclosure of this specification provides many different embodiments, or examples, for implementing the various features of the invention. However, the following disclosures in this specification describe specific examples of each component and its arrangement in order to simplify the description of the invention. Of course, these specific examples are not intended to limit the present invention. For example, if the following disclosure in this specification describes that a first characteristic component is formed on or above a second characteristic component, it means that it includes that the formed first characteristic component and the aforementioned second characteristic component are directly Embodiments that are in contact also include embodiments where an additional feature is formed between the first feature and the second feature such that the first feature and the second feature may not be in direct contact. In add...
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The invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a base feature disposed on a base, the base feature has a first length extending in a first direction and a second length extending in a second direction, the first length is greater than the second length, and the device further includes a base feature disposed on a first material feature on the substrate, the first material feature having a first surface in physical contact with the base feature and a second surface opposite the first surface, the first surface having a third length extending in the first direction and A fourth length extending in the second direction, the third length is greater than the fourth length, the second surface has a fifth length extending in the first direction and a sixth length extending in the second direction, the sixth length is greater than the fifth length.
Description
technical field [0001] The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to an interconnection structure of a semiconductor device and a manufacturing method thereof. Background technique [0002] Integrated circuits (ICs) have undergone rapid growth, and advances in IC materials and design have produced many generations of ICs. Each generation has smaller and more complex circuits than the previous generation. During the evolution of ICs, functional density (ie, the number of interconnected devices per unit wafer area) has gradually increased while geometry size (ie, the smallest element (or line) that can be produced by a manufacturing process) has gradually decreased. [0003] This scaled-down process provides benefits by increasing production efficiency and reducing associated costs. However, the shrinking process described above makes the IC process and manufacturing more and more complicated. To achieve...
Claims
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IPC IPC(8): H01L23/528H01L21/768
CPCH01L21/76838H01L23/528H01L21/31116H01L21/31144H01L21/32136H01L21/32137H01L21/32139H01L21/76804H01L21/76885H01L23/485H01L23/5226H01L23/5283H01L21/76816
Inventor 张世明石志聪
Owner TAIWAN SEMICON MFG CO LTD