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Preparation and application method of a reflective image device

An image device, reflective technology, applied in surface reactive electrolytic coating, sputtering coating, microlithography exposure equipment, etc., can solve the problems that restrict the popularization and application of reflective image devices, complicated operating procedures and high production costs , to achieve the effects of low cost, environmentally friendly preparation and simple preparation

Active Publication Date: 2018-06-26
SUN YAT SEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the device preparation of this method mostly relies on the large and complex physical equipment of electron beam exposure, so there are problems of high preparation cost, complicated operation process and small imaging area, which seriously restrict the popularization and application of reflective imaging devices.

Method used

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  • Preparation and application method of a reflective image device
  • Preparation and application method of a reflective image device
  • Preparation and application method of a reflective image device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Such as figure 1 As shown, a method for manufacturing a reflective image device includes the following steps:

[0031] (1) Aluminum sheet cleaning: Use acetone to soak the aluminum sheet with a thickness greater than 1mm for 5-15 minutes, then soak the aluminum sheet with 0.5-1.5 mol / L sodium hydroxide solution for 5-15 minutes, and finally soak the aluminum sheet 5 with alcohol. -15min;

[0032] (2) Polishing of aluminum sheet: Put the aluminum sheet soaked in alcohol into a solution with a volume ratio of perchloric acid and alcohol of 15-35%, and electrochemically polish for 2-6min with a voltage of 10-30V, and the polishing temperature is 0- 4℃;

[0033] (3) The first oxidation of aluminum sheet: Put the polished aluminum sheet into an electrolytic cell with an electrolyte of 0.1-0.3mol / L oxalic acid solution. The aluminum sheet is used as the anode and the platinum sheet is used as the cathode. The growth voltage is 30-50V. The oxidation time is 2-8 hours, and the oxida...

Embodiment 2

[0049] In this embodiment, the aluminum foil with a thickness of 0.2cm is put into acetone, 1.5mol / L sodium hydroxide solution and alcohol solution, respectively, soaked and cleaned for 15 minutes; the aluminum foil soaked in alcohol is put into the volume ratio of perchloric acid and alcohol It is a 0.3 solution, using a voltage of 20V, electrochemical polishing for 6 minutes, the aluminum sheet is connected to the anode, the platinum sheet is used as the cathode, and the polishing temperature is 0°C.

[0050] The polished aluminum sheet is subjected to the first anodization. The electrolyte uses 0.3 mol / L oxalic acid solution, the growth voltage is 45V, the aluminum sheet is connected to the anode, and the platinum sheet is used as the cathode. The oxidation time is 4-8 hours, and the reaction temperature is 4°C. . After the first oxidation, the aluminum flakes are put into a mixed solution of chromic acid, phosphoric acid and distilled water. The mass fraction of chromic acid ...

Embodiment 3

[0054] In this embodiment, the aluminum foil with a thickness of 0.2cm is successively put into acetone, 1.5mol / L sodium hydroxide solution and alcohol solution to soak and clean for 15 minutes; the aluminum foil soaked in alcohol is put into perchloric acid and the volume ratio of alcohol is 0.3 solution, using a voltage of 20V, electrochemical polishing for 6 minutes, the aluminum sheet is connected to the anode, the platinum sheet is used as the cathode, and the polishing temperature is 0°C.

[0055] The polished aluminum sheet is subjected to the first anodization. The electrolyte uses 0.3 mol / L oxalic acid solution, the growth voltage is 45V, the aluminum sheet is connected to the anode, and the platinum sheet is used as the cathode. The oxidation time is 4-8 hours, and the reaction temperature is 4°C. . After the first oxidation, the aluminum flakes are put into a mixed solution of chromic acid, phosphoric acid and distilled water. The mass fraction of chromic acid is 1.8% ...

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Abstract

The invention discloses a preparation and application method of a reflective image device. The reflective image device of the invention is composed of a semi-continuous film of metal particles, a porous aluminum oxide film and a metal high-reflection layer structure. The structure has the advantages of simple preparation, low cost Low cost, friendly preparation environment, large sample area and other advantages, can play an important role in the development and preparation of the next generation of imaging devices; the smallest pixel of the obtained imaging can be in the order of microns, which is far smaller than the smallest pixel of most current self-luminous screens; The image is also color-changeable and can be used for functions such as information encryption and trademark decoration.

Description

Technical field [0001] The invention relates to the technical field of image devices, and more specifically to a method for preparing and applying a reflective image device. Background technique [0002] Reflective imaging devices are considered to be the next generation of imaging components. The current mainstream reflective imaging devices originated in 2012. Singapore’s Joel KWYang et al. used metal nanodisks of different shapes to plasmon resonance to scatter light of different wavelengths. With different capabilities, reflective image devices with a resolution reaching the diffraction limit were prepared. The reflective image obtained by the reflective image device has ultra-small pixels, ultra-high image durability, and ultra-large information capacity, and has attracted widespread attention, which greatly promotes the development of the manufacturing process and application field extension of the reflective image device. However, the device preparation of this method mos...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C25D11/12C23C14/02C23C14/34
CPCC23C14/021C23C14/34C25D11/12C25D11/10C25D11/16C25D11/24C23C14/185C25F3/20G03F7/70
Inventor 周张凯薛建材韦志强王雪华
Owner SUN YAT SEN UNIV