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Substrate processing apparatus and method for manufacturing semiconductor device

A substrate processing device and gas processing technology, which are used in semiconductor/solid-state device manufacturing, ion implantation plating, gaseous chemical plating, etc., can solve problems such as pattern size miniaturization, and achieve the effect of suppressing particles and suppressing generation

Active Publication Date: 2017-03-15
KOKUSA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the pattern size has been significantly miniaturized

Method used

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  • Substrate processing apparatus and method for manufacturing semiconductor device
  • Substrate processing apparatus and method for manufacturing semiconductor device
  • Substrate processing apparatus and method for manufacturing semiconductor device

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Experimental program
Comparison scheme
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no. 1 Embodiment approach

[0033] Hereinafter, a first embodiment of the present invention will be described.

[0034]

[0035] The structure of the substrate processing apparatus 100 of this embodiment is shown in figure 1 . Such as figure 1 As shown, the substrate processing apparatus 100 is configured in the form of a monolithic substrate processing apparatus.

[0036] (processing container)

[0037] Such as figure 1 As shown, the substrate processing apparatus 100 includes a processing vessel 202 . The processing container 202 is configured as, for example, a circular and flat airtight container with a cross section. In addition, the processing container 202 is made of metal materials such as aluminum (Al) and stainless steel (SUS), for example. In the processing chamber 202 are formed a processing space 201 for processing a wafer 200 such as a silicon wafer as a substrate, and a transfer space 203 for passing the wafer 200 when transferring the wafer 200 to the processing space 201 . The p...

no. 2 Embodiment approach

[0194] Next, use Figure 8 , Figure 9 The second embodiment will be described. Figure 8 (A) is a top view of the component drop prevention part 260, Figure 8 (B) for Figure 8 (A) γ—γ′ cross-sectional view. Figure 9 (A) is a bottom view of the component drop prevention part 260, Figure 9 (B) for Figure 9 (A) View of a. The component drop prevention unit 260 described in the second embodiment is a modified example of the component drop prevention unit 250 in the first embodiment. Therefore, in the following, the description of the component drop prevention unit 260 will be centered, and the other configurations will be the same as those of the first embodiment, so the description will be omitted.

[0195] The component drop preventing portion 260 is placed on the upper surface of the bottom wall 202c, and also placed on the outer periphery of the shaft 217 via the gap 260a. The component drop preventing portion 260 has a first structure 261 and a second structure ...

no. 3 Embodiment approach

[0207] Next, use Figure 10 The third embodiment will be described. Figure 10 (A) is a top view of the component drop prevention part 270, Figure 10 (B) is Figure 10 (A) δ-δ' cross-sectional view. The component drop prevention unit 270 described in the third embodiment is a modified example of the component drop prevention unit 250 in the first embodiment. Therefore, in the following, the description of the component drop prevention unit 270 will be centered, and the other configurations will be the same as those of the first embodiment, so the description will be omitted.

[0208] The component drop preventing portion 270 is placed on the upper surface of the bottom wall 202c, and also placed on the outer periphery of the shaft 217 via the gap 270a. The component drop preventing portion 270 has a first structure 271 and a second structure 272 . The first structure 271 and the second structure 272 are combined to form a circumferential shape.

[0209] The first struct...

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PUM

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Abstract

The invention provides a substrate processing apparatus and a method for manufacturing the semiconductor device. The substrate processing apparatus includes: a process container where a substrate is processed; a process gas supply unit configured to supply a process gas into the process container; a substrate placing table installed in the process container; a shaft penetrating a hole at a bottom portion of the process container and coupled to the substrate placing table; a bellows surrounding the shaft and disposed outside of the process container wherein an inner space thereof is in communication with a space of the process container; an inert gas supply system configured to supply an inert gas into the inner space of the bellows disposed outside of the process container; and a component falling prevention unit including at least a first structure disposed along a first portion of the hole at the bottom of the process container and a second structure disposed along a second portion of the hole adjacent to the first structure.

Description

technical field [0001] The present invention relates to a method and program for manufacturing a substrate processing device and a semiconductor device. Background technique [0002] In recent years, semiconductor devices such as flash memories tend to be highly integrated. Along with this, the pattern size is significantly miniaturized. Contents of the invention [0003] The problem to be solved by the invention [0004] In a finer pattern, the influence of particles becomes more pronounced, so it is necessary to suppress the generation of particles. [0005] In view of the above problems, the present invention aims to provide a technique capable of suppressing the generation of particles. [0006] means to solve the problem [0007] In one aspect of the present invention, there is provided a technique comprising: a processing container for processing a substrate; a gas supply unit for supplying a processing gas to the processing container; a substrate mounting table ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67C23C16/54
CPCC23C16/4405C23C14/50C23C16/4401C23C16/4408C23C16/4409C23C16/4412C23C16/45565C23C16/45587C23C16/45591C23C16/4583H01J37/32871H01L21/68764H01L21/68792H01L21/67017C23C16/54
Inventor 芦原洋司泽田元司
Owner KOKUSA ELECTRIC CO LTD