High-mobility gallium nitride semiconductor device and preparation method thereof
A high-mobility, gallium nitride technology, applied in the field of high-mobility gallium nitride semiconductor devices and their preparation, can solve the problems of low transistor characteristics of power devices, low quality of un-GaN/AlGaN, etc., and achieves improvement effect, Effect of improving electron mobility characteristics
Pending Publication Date: 2017-03-15
INNOSCIENCE (ZHUHAI) TECH CO LTD
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Problems solved by technology
[0007] So far, it is necessary to improve the quality of the un-GaN / AlGaN interface (interface) by using the structure that forms the un-GaN / AlGaN layer. In this case, the quality of the un-GaN / AlGaN is low, and the characteristics of the transistor of the power device are also low.
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[0038] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. Preferred embodiments of the invention are shown in the accompanying drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. On the contrary, these embodiments are provided to make the understanding of the disclosure of the present invention more thorough and comprehensive.
[0039] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terms used herein in the description of the present invention are for the purpose of describing specific embodiments only, and are not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of ...
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Abstract
The invention relates to a high-mobility gallium nitride semiconductor device and a preparation method thereof. The high-mobility gallium nitride semiconductor device comprises a substrate, an aluminum nitride seed crystal layer arranged on the substrate, a buffer layer arranged on the aluminum nitride seed crystal layer, an unintentional-doped gallium nitride layer arranged on the buffer layer, a channel layer arranged on the unintentional-doped gallium nitride layer, a second aluminum gallium nitride layer arranged on the channel layer and a gallium nitride cap layer arranged on the second aluminum gallium nitride layer, wherein the channel layer is an indium gallium nitride layer, an aluminum gallium nitride layer or a composite layer. According to the gallium nitride semiconductor device, the electron mobility characteristic of a gallium nitride power device can be improved; and the effect of using a 2DEG of an un-GaN / InGaN / AlGaN layer can be improved.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride semiconductor device with high mobility and a preparation method thereof. Background technique [0002] The existing power semiconductor market is dominated by silicon power devices. In the past 20 years, the power density of silicon power devices has increased by 5-6 times every ten years, but it is already close to the theoretical limit, and it is difficult to expect the next improvement in performance. . [0003] Compared with silicon or gallium arsenide, GaN semiconductor has the advantages of wide energy gap (Eg=3.4eV), high temperature and medium stability. In addition, compared to silicon power semiconductors, GaN power semiconductors have low-temperature resistance characteristics, which has the advantages of minimizing conversion losses and system power consumption associated with power semiconductors. GaN semiconductor devices realize low-loss...
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IPC IPC(8): H01L29/778H01L21/335
CPCH01L29/66462H01L29/7786
Inventor 金荣善
Owner INNOSCIENCE (ZHUHAI) TECH CO LTD