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A silicon wafer test probe station

A technology for testing probes and silicon wafers, which is applied in the direction of single semiconductor device testing, measuring electricity, and measuring devices. It can solve the problems of inability to test silicon wafers with special shapes and insufficient versatility, and achieve convenient application and cost saving. Effect

Active Publication Date: 2019-05-31
广东利扬芯片测试股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing probe stations can only test circular silicon wafers (wafers), and cannot test some special-shaped silicon wafers, and their versatility is insufficient

Method used

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  • A silicon wafer test probe station
  • A silicon wafer test probe station
  • A silicon wafer test probe station

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Such as figure 1 A silicon wafer test probe station shown includes a controller, a vacuum chuck 1, a probe card 2, a display device 3 and a conductive carrier plate 41 made of copper, wherein the controller is connected with the vacuum chuck 1, the probe card 2 and the display device 3 are communicated with the controller respectively, and the circular conductive carrier plate 41 is arranged between the vacuum chuck 1 and the silicon wafer to be tested. Refer to figure 2 , the conductive carrier plate 41 includes a placement area 411 for placing the silicon wafer to be tested, and the placement area 411 is provided with an air channel that penetrates to the bottom surface of the conductive carrier plate 41, referring to image 3 The top surface of the placement area 411 is covered with a conductive adhesive layer 43 attached to the silicon wafer to be tested. The bottom surface of the conductive carrying plate 41 is provided with a relay as an electric control switch ...

Embodiment 2

[0033] On the basis of Embodiment 1, the electric control switch 44 is changed from a relay to a field effect tube. Specifically, refer to Figure 4 , the gate of the field effect transistor is connected to the control terminal of the controller through a resistor R2, the drain of the field effect transistor is electrically connected to the conductive carrier plate 41, the source of the field effect transistor is grounded, and a resistor is arranged between the source of the field effect transistor and the grid. R3, and the controller control terminal is provided with a pull-up resistor R1. When the probes of the probe card 2 are in contact with the silicon wafer to be tested, the controller controls the field effect transistor to be turned on and then turned off.

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Abstract

The invention relates to a silicon wafer testing probe bench, and belongs to the technical field of silicon wafer test. A circular conductive loading plate is arranged between a vacuum sucker and a silicon wafer to be tested, the top side of the circular conductive loading plate is provided with an accommodating area which accommodates the silicon wafer to be tested, an air channel which penetrates to the bottom side of the conductive loading plate is formed in the accommodating area, the accommodating area is covered with a conducting resin layer which pasted to the silicon wafer to be tested, and after that silicon wafers, of different shapes, to be tested are pasted to the conducting resin layer, the vacuum sucker sucks the silicon wafer to be tested via the air channel, and a controller controls a probe card to implement test. Compared with the prior art, the circular conductive loading plate enables that the silicon wafers, of different shapes, to be tested are pasted to the conducting resin layer and tested by the probe card, traditional circular silicon wafers as well as silicon wafers of special shapes can be tested, and the silicon wafer testing probe bench can be widely used.

Description

technical field [0001] The invention relates to the technical field of silicon wafer testing, in particular to a silicon wafer testing probe station. Background technique [0002] Silicon wafers are processed from silicon ingots. Millions of transistors can be etched on silicon wafers through special processes. They are widely used in the manufacture of integrated circuits. Because of their circular shape, they are called crystal wafers. Round, the machine that conducts electrical tests on the wafer is the probe station. Existing probe stations can only test circular silicon wafers (wafers), but cannot test silicon wafers with special shapes, and their versatility is insufficient. Contents of the invention [0003] The purpose of the present invention is to avoid the above-mentioned deficiencies in the prior art and provide a silicon wafer test probe station, so that the probe station can not only test circular silicon wafers, but also test silicon wafers with special sha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R31/26
CPCG01R31/2601
Inventor 杨柳张会战袁刚曾德杰
Owner 广东利扬芯片测试股份有限公司