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A Numerical Simulation Method for Efficiently Separating Deep Level Transient Spectrum Test Signals

A technology for testing signals and numerical simulation, applied in the field of numerical simulation, can solve problems such as inability to effectively and accurately fit and separate signal peaks

Active Publication Date: 2019-06-25
SHANGHAI INST OF SPACE POWER SOURCES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This is also reflected in the actual experimental test. The fitting tools provided by the current deep-level transient spectrum testing equipment cannot effectively and accurately fit and separate the signal peaks. This is mainly because the number of deep-level defects in all semiconductor materials exceeds One, and in the process of material preparation, the spatial distribution of defects may not be uniform, usually these defects are still coupled together

Method used

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  • A Numerical Simulation Method for Efficiently Separating Deep Level Transient Spectrum Test Signals
  • A Numerical Simulation Method for Efficiently Separating Deep Level Transient Spectrum Test Signals
  • A Numerical Simulation Method for Efficiently Separating Deep Level Transient Spectrum Test Signals

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Embodiment 1

[0090] Such as Figure 6 As shown, the structure for the purpose of defect electronics parameters in the barrier layer of a high-speed electron mobility transistor is taken as an example, which includes Au Schottky contact layer 1, InAlAs barrier layer 2, n-InP substrate 3, n-type contact layer 4. The structure is grown on the n-InP substrate by using low-pressure metal-organic chemical vapor deposition equipment, and the simulation method provided by the invention is used to fit the instrument test results to show that there are two deep level defects with a relatively close distance (0.1eV) in the material .

Embodiment 2

[0092] Such as Figure 7 As shown, taking the defect electronic parameters of AlGaInP commonly used in compound semiconductor material solar cells as an example, it includes Au Schottky contact layer 1, AlGaInP barrier layer 2, n-GaAs substrate 3, AuGeNi Ohmic contact layer 4 . The structure is grown on the n-GaAs substrate by using low-pressure metal-organic chemical vapor deposition equipment, and the simulation method provided by the invention is used to fit the instrument test results to show that there are two deep-level defects with an energy distance of ~0.2eV in the material.

[0093] Compared with the prior art, the numerical simulation method for effectively separating the deep-level transient spectrum test signal provided by the present invention is a method for numerically simulating and effectively separating the deep-level transient spectrum signal of the compound semiconductor Schottky barrier. A method for mutually coupled deep-level defect phases. The method...

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Abstract

The invention discloses a numeric simulation method for effectively separating a deep-level transient spectroscopy (DLTS) test signal. The method comprises the steps of S0, performing a test by utilizing a DLTS test instrument to obtain a deep-level defect spectrum signal delta Cexp(Ti); S1, performing discrete processing on a physical region of a compound semiconductor Schottky barrier to generate a grid unit; S2, solving a heat balance Poisson equation to obtain node electrostatic potentials of grids, setting an electron / hole quasi Fermi potential to be 0, setting an electron / hole ensemble temperature to be a room temperature value, and performing storage as a global initial value; S3, selecting a plurality of temperature points {Ti} during sample testing, and calculating a corresponding DLTS numeric calculation signal delta Csim(Ti); S4, performing comparative fitting on the numeric calculation signal delta Csim(Ti) and an instrument test signal delta Cexp(Ti), and analyzing a deviation state; and S5, adjusting deep-level defect parameters or number, and repeating the steps S2-S4 until the deviation state meets the demand. According to the method, the DLTS signal of the compound semiconductor Schottky barrier is subjected to numeric simulation and a plurality of mutually coupled deep-level defects are effectively separated, so that the accuracy of device design and test analysis is improved.

Description

technical field [0001] The invention relates to a numerical simulation method, in particular to a numerical simulation method capable of effectively separating deep level transient spectrum (DLTS, Deep Level Transient Spectroscopy) test signals. Background technique [0002] At present, compound semiconductor devices are widely used in semiconductor devices such as microwave, photoelectric conversion, detection, light emission and absorption. Understanding the defect characteristics in different materials in these device structures is instructive for the design of device structures and the analysis of test results. The basic steps of the deep-level transient spectrum testing method for material defect characteristics are as follows: figure 1 As shown, a Schottky (Schottky) junction is formed between the semiconductor material to be tested and the metal, and a reverse bias pulse is applied to the material so that the deep-level defects in the material are completely occupied ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/11
CPCG06F17/11
Inventor 张玮李欣益陆宏波张梦炎张华辉杨丞陈杰郑奕
Owner SHANGHAI INST OF SPACE POWER SOURCES