A Simple Preparation Method of Secondary Electron Emission Thin Film
A technology for secondary electron emission and thin film, which is applied in the simple preparation of secondary electron emission thin film and the preparation of MgO thin film. Good secondary emission coefficient, controllable film thickness, and good crystallinity
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Embodiment 1
[0032] Put the polished and ultrasonically cleaned metallic silver substrate into the magnetron sputtering sample chamber, and fix it on the metal substrate with high-temperature adhesive tape. Under the argon atmosphere, the argon ion glow generated by the radio frequency power supply under the power condition of 50W was used for 300s. After that, the sample is sent to the reaction chamber for vacuuming, and the vacuum degree of the background is reduced to 5×10 -4 Pa, start to pass into O 2 / Ar mixed gas, O 2 The / Ar gas flow ratio is 1 / 90. When the vacuum degree of the reaction chamber is 1Pa, keep the baffle under the magnesium target closed, and start the DC pre-sputtering, the sputtering power is 150W, and the time is 300s. Afterwards, the baffle was opened, and Mg was formally sputtered by direct current for 60 minutes. The substrate was not heated, which was room temperature 25°C. After sputtering, the vacuum chamber was filled with air, and the sample was taken o...
Embodiment 2
[0034] Put the polished and ultrasonically cleaned metallic silver substrate into the magnetron sputtering sample chamber, and fix it on the metal substrate with high-temperature adhesive tape. Under the argon atmosphere, the argon ion glow generated by the radio frequency power supply under the power condition of 50W was used for 300s. Afterwards, the sample is sent to the reaction chamber to evacuate, and the substrate is heated to 400°C. Wait until the vacuum degree of the background drops to 5×10 -4 Pa, start to pass into O 2 / Ar mixed gas, O 2 The / Ar gas flow ratio is 1 / 90. When the vacuum degree of the reaction chamber is 1Pa, keep the baffle under the magnesium target closed, and start the DC pre-sputtering, the sputtering power is 150W, and the time is 300s. Afterwards, the baffle was opened, and Mg was formally sputtered by direct current for 60 minutes. After the sputtering, the substrate temperature was cooled to below 60°C, and the vacuum chamber was filled w...
Embodiment 3
[0036] Put the polished and ultrasonically cleaned metal aluminum substrate into the magnetron sputtering sample chamber, and fix it on the metal substrate with high-temperature adhesive tape. Under the argon atmosphere, the argon ion glow generated by the radio frequency power supply under the power condition of 50W was used for 300s. Afterwards, the sample is sent to the reaction chamber to evacuate, and the substrate is heated to 400°C. Wait until the vacuum degree of the background drops to 5×10 -4 Pa, start to pass into O 2 / Ar mixed gas, O 2The / Ar gas flow ratio is 1 / 90. When the vacuum degree of the reaction chamber is 1Pa, keep the baffle under the magnesium target closed, and start the DC pre-sputtering, the sputtering power is 150W, and the time is 300s. Afterwards, the baffle was opened, and Mg was formally sputtered by direct current for 60 minutes. After the sputtering, the substrate temperature was cooled to below 60°C, and the vacuum chamber was filled wit...
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