A light-emitting diode epitaxial wafer and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as the accumulation of cone defects, and achieve the effect of easy control of process parameters
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Embodiment 1
[0030] combine figure 2 , the present embodiment provides a method for manufacturing a light-emitting diode epitaxial wafer, comprising the steps of:
[0031] Step 101: Use a stepper photolithography machine to coat a photoresist on a flat sapphire substrate to make a pattern, and implant an alignment mark at the same time, and then perform dry etching with an inductively coupled plasma etching machine to etch a conical sapphire substrate. At the same time as the graphics, the alignment mark of the stepper lithography machine is also produced, and then cleaned; implanting the alignment mark is an existing technology for the IC industry, and different equipment marking points will be different, but in the LED industry The patterned substrate is not implanted with marking points.
[0032] Step 102: After the patterned substrate is fabricated, grow an epitaxial U-GaN layer by MOCVD, and the thickness of the epitaxial U-GaN layer is between 2000nm and 3000nm;
[0033] Step 103:...
Embodiment 2
[0037] This embodiment provides a method for manufacturing a light-emitting diode epitaxial wafer, comprising steps:
[0038] Step 201: use a stepper photolithography machine to coat a photoresist on a flat sapphire substrate to make a pattern, and implant an alignment mark at the same time, and then perform dry etching with an inductively coupled plasma etching machine to etch a conical At the same time as the graphics, the alignment marks of the stepper lithography machine are also produced, and then cleaned;
[0039] Step 202: After the patterned substrate is fabricated, grow an epitaxial U-GaN layer by MOCVD, and the thickness of the epitaxial U-GaN layer is 2000 nm;
[0040] Step 203: Take out the epitaxial wafer grown to the epitaxial U-GaN layer and coat it with photoresist, use a stepper photolithography machine to fit, and open a 20nm hole above the conical pattern;
[0041] Step 204: using an inductively coupled plasma etching machine to perform dry etching with an ...
Embodiment 3
[0044]This embodiment provides a method for manufacturing a light-emitting diode epitaxial wafer, comprising steps:
[0045] Step 301: use a stepper photolithography machine to coat a photoresist on a flat sapphire substrate to make a pattern, and implant an alignment mark at the same time, and then perform dry etching with an inductively coupled plasma etching machine to etch a conical At the same time as the graphics, the alignment marks of the stepper lithography machine are also produced, and then cleaned;
[0046] Step 302: After the patterned substrate is fabricated, grow an epitaxial U-GaN layer by MOCVD, and the thickness of the epitaxial U-GaN layer is 3000 nm;
[0047] Step 303: Take out the epitaxial wafer grown to the epitaxial U-GaN layer and coat it with photoresist, use a stepper photolithography machine to fit it, and open a 200nm hole above the conical pattern;
[0048] Step 304: Perform dry etching with an inductively coupled plasma etching machine, the etch...
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Abstract
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