P-type CuMSnO amorphous oxide semiconductor thin film and preparation method of p-type CuMSnO amorphous oxide semiconductor thin film
A technology of amorphous oxide and semiconductor, applied in semiconductor/solid-state device manufacturing, semiconductor devices, transistors, etc., to achieve good performance, good material characteristics, and promote development
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Embodiment 1
[0029] (1) with high-purity Cu 2 O, Al 2 o 3 and SnO powder as raw materials, mixed, ground, and sintered in an Ar atmosphere at 950°C to make CuAlSnO ceramic sheets as targets, in which the atomic ratio of Cu, Al, and Sn is 1:0.5:2;
[0030] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to 9×10 -4 Pa;
[0031] (3) Pass into O 2 As the working gas, the gas pressure is 13Pa, the substrate temperature is room temperature, the target is bombarded with pulsed laser, the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film, and p-type CuAl is obtained. 0.5 sn 2 o 3.25 Amorphous thin film.
[0032] Using quartz as the substrate, p-type CuAl was prepared according to the above growth steps 0.5 sn 2 o 3.25 The film was tested for its structure, electrical and optical properties. The test results are: the film is amo...
Embodiment 2
[0035] (1) with high-purity Cu 2 O, Al 2 o 3 and SnO powder as raw materials, mixed, ground, and sintered in an Ar atmosphere at 1000°C to make CuAlSnO ceramic sheets as targets, in which the atomic ratio of Cu, Al, and Sn is 1:1:1;
[0036] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to 9×10 -4 Pa;
[0037] (3) Pass into O 2 As the working gas, the gas pressure is 11Pa, the substrate temperature is room temperature, the target is bombarded with pulsed laser, the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film, and p-type CuAlSnO is obtained. 2 Amorphous thin film.
[0038] Using quartz as the substrate, p-type CuAlSnO was prepared according to the above growth steps 2 The film was tested for its structure, electrical and optical properties. The test results are: the film is amorphous, with a thickness of...
Embodiment 3
[0041] (1) with high-purity Cu 2 O, Al 2 o 3 and SnO powder as raw materials, mixed, ground, and sintered in an Ar atmosphere at 1050°C to make CuAlSnO ceramic sheets as targets, in which the atomic ratio of Cu, Al, and Sn is 1:1.5:2;
[0042] (2) Using the pulsed laser deposition (PLD) method, the substrate and target were installed in the PLD reaction chamber, and the vacuum was evacuated to 9×10 -4 Pa;
[0043] (3) Pass into O 2 As the working gas, the gas pressure is 9Pa, the substrate temperature is room temperature, the target is bombarded with pulsed laser, the atoms and molecules on the surface of the target are melted and deposited on the substrate to form a thin film, and p-type CuAl is obtained. 1.5 sn 2 o 4.75 Amorphous thin film.
[0044] Using quartz as the substrate, p-type CuAl was prepared according to the above growth steps 1.5 sn 2 o 4.75 The film was tested for its structure, electrical and optical properties. The test results are: the film is amo...
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