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Charge generation structure and preparation method and application thereof

A charge and nanostructure technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems affecting device performance and life, heat surge, etc., to improve efficiency and service life, simple process, and low precision requirements.

Active Publication Date: 2017-05-24
GUAN YEOLIGHT TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In OLED devices, if only a single-layer device is used to achieve higher brightness, the heat will increase sharply due to excessive driving current, which will affect the performance and life of the device.

Method used

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  • Charge generation structure and preparation method and application thereof
  • Charge generation structure and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] This embodiment provides a charge generating structure, such as figure 1 As shown, it includes a first film layer 1 and a second film layer 2 that are stacked.

[0037] As an embodiment of the present invention, in this embodiment, the interface roughness (RMS) of the first film layer 1 and the second film layer 2 is 20 nm. The first film layer 1 is WO 3 Nanoparticle layer, the thickness of which is 50nm, the second film layer 2 is NPB (N,N'-di(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4 '-diamine) layer with a thickness of 50 nm.

[0038] As a changeable embodiment of the present invention, the first film layer 1 can also be metals such as Ag, Al or V 2 o 5 、MoO 3 、WO 3 、ReO 3 A nanostructured layer (such as a nanoparticle layer, a nanowire layer, a nanoflower layer, a nanosheet layer, etc.) with an interface roughness (RMS) of 0.1nm to 50nm formed by a metal oxide, and the second film layer 2 is organic The carrier transport material layer, that is, the combin...

Embodiment 2

[0060] This embodiment provides a charge generating structure, the structure and preparation method of which are the same as those in Embodiment 1, except that the roughness of the interface between the first film layer and the second film layer is 50 nm.

[0061] The first film layer is Ag nanowire layer, its thickness is 100nm, and the second film layer is (CH 3 NH 3 )PbI 3 layer with a thickness of 50 nm.

[0062] This embodiment also provides an organic electroluminescent device, the structure of each functional layer in the first light-emitting unit and the structure of each functional layer in the second light-emitting unit are the inverted structure of Example 1, and the preparation method is the same as that of Example 1, except that It is noted that the charge generation structure is the structure described in this embodiment.

Embodiment 3

[0064] This embodiment provides a charge generating structure, the structure and preparation method of which are the same as those in Embodiment 1, except that the roughness of the interface between the first film layer and the second film layer is 0.1 nm.

[0065] The first film layer is MoO with nano-folds on the surface 3 layer with a thickness of 1 nm, and the second film layer is a TCTA (4,4',4"-tris(carbazol-9-yl)triphenylamine) layer with a thickness of 1 nm.

[0066] This embodiment also provides an organic electroluminescent device, the structure and preparation method of which are the same as those in Embodiment 1, except that the charge generating structure is the structure described in this embodiment.

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Abstract

The invention belongs to the field of organic electroluminescence, and relates to a charge generation structure. The charge generation structure comprises a first film layer and a second film layer which are arranged in a stacked manner, and is characterized in that the interface roughness of the first film layer and the second film layer is 0.1nm-50nm. The rough interface design effectively increases the contact area of the first film layer and the second film layer and increases a binding force between the film layers, thereby not only being capable of generating more carriers, but also being capable of realizing efficient carrier injection, and being capable of effectively improving the efficiency and the service life of devices applying the charge generation structure. The preparation method of the charge generation structure is simple in process, low in precision requirement and low in cost.

Description

technical field [0001] The invention belongs to the field of organic electroluminescence, and in particular relates to a charge generating structure and its preparation method and application. Background technique [0002] Organic Light-Emitting Diode (English full name Organic Light-Emitting Diode, referred to as OLED) is an active light-emitting device, which has the advantages of high contrast, wide viewing angle, low power consumption, thinner volume, and flexibility. The flat panel display device using it is expected to become the next generation The mainstream flat panel display technology is one of the most concerned technologies in the flat panel display technology. [0003] In an OLED device, if only a single-layer device is used to achieve higher brightness, excessive driving current will cause a surge in heat, which will affect the performance and life of the device. Professor Kido of Yamagata University in Japan first proposed the concept of tandem OLED, envisag...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56B82Y30/00
CPCB82Y30/00H10K50/171H10K71/00
Inventor 郭立雪朱映光谢静胡永岚于倩倩
Owner GUAN YEOLIGHT TECH CO LTD