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Simple and low-cost preparation method for poly(3,4-ethylendioxythiophene)-poly(styrenesulfonate) nanowire

A technology of ethylenedioxythiophene and styrene sulfonic acid, which is applied in the field of conductive polymer micro-nano processing, can solve the problems of high cost of template, time-consuming preparation process, complicated preparation methods, etc., and achieves short preparation time and product yield. The effect of high rate and simple process

Inactive Publication Date: 2017-05-31
JIANGNAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, high-resolution templates are expensive, complicated to prepare, and time-consuming to prepare, which limits the application of nanoimprinting in the preparation of conductive high-polymer nanowires. [38]

Method used

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  • Simple and low-cost preparation method for poly(3,4-ethylendioxythiophene)-poly(styrenesulfonate) nanowire

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] First, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) was sprayed on a 1×1cm 2 A thin film is formed on the surface of a silicon wafer with a silicon dioxide layer attached on the surface, and the thickness of the film is 20nm.

[0021] Spin-coat polymethyl methacrylate (PMMA) on the surface of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) film, and control the thickness of PMMA film to 150nm. Nanoimprinting was performed on the PMMA surface, the imprinting time was 5min, the imprinting pressure was 40Bar, and the imprinting temperature was 160°C. The imprinting template was a micron-sized silicon template (strip height 500nm, strip width 3μm, and strip spacing 1μm).

[0022] After imprinting, a PMMA double-ridge structure with a size smaller than that of the template is obtained. Then utilize plasma etching technique to transfer PMMA structure to poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) surface, etching condition is: O 2 ...

Embodiment 2

[0024] First, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) was sprayed on a 1×1cm 2 A thin film is formed on the surface of a silicon wafer with a silicon dioxide layer attached on the surface, and the thickness of the film is 20nm.

[0025] Polymethyl methacrylate (PMMA) was spin-coated on the surface of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) film, and the film thickness of PMMA was controlled to be 35nm. Nanoimprinting was performed on the PMMA surface, the imprinting time was 5min, the imprinting pressure was 40Bar, and the imprinting temperature was 160°C. The imprinting template was a micron-sized silicon template (strip height 500nm, strip width 3μm, and strip spacing 1μm).

[0026] After imprinting, a PMMA double-ridge structure with a size smaller than that of the template is obtained. Then utilize plasma etching technique to transfer PMMA structure to poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) surface, etching cond...

Embodiment 3

[0028] First, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) was sprayed on a 1×1cm 2 A thin film is formed on the surface of a silicon wafer with a silicon dioxide layer attached on the surface, and the thickness of the film is 20nm.

[0029] Polymethyl methacrylate (PMMA) was spin-coated on the surface of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) film, and the film thickness of PMMA was controlled to be 35nm. Nanoimprinting was performed on the PMMA surface, the imprinting time was 5min, the imprinting pressure was 40Bar, and the imprinting temperature was 160°C. The imprinting template was a micron-sized silicon template (strip height 500nm, strip width 3μm, and strip spacing 1μm).

[0030] After imprinting, a PMMA double-ridge structure with a size smaller than that of the template is obtained. Then utilize plasma etching technique to transfer PMMA structure to poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) surface, etching cond...

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Abstract

Disclosed is a method for constructing a poly(3,4-ethylendioxythiophene)-poly(styrenesulfonate) (PEDOT: PSS) nanowire by a nanoscale template. The method specifically comprises the steps of assembling a conductive PEDOT: PSS thin film on a substrate firstly, and controlling the thickness of the PEDOT: PSS film through growth time; coating the surface of the PEDOT: PSS film with imprinting adhesive in a spin coating manner, and controlling the thickness of the imprinting adhesive through spin coating; next, inducing a nanostructure on the surface of the imprinting adhesive through the nanoscale template by adopting a fringe effect of a nanoimprint technology; and finally, transferring the nanostructure to the PEDOT: PSS film through an anisotropic plasma etching technology so as to construct the high-resolution PEDOT: PSS nanowire by the nanoscale template. The PEDOT: PSS nanowire prepared by the method has the characteristics of low cost, simple process, short time consumption and high resolution.

Description

technical field [0001] The invention relates to the field of micro-nano processing of conductive polymers, in particular to a method for preparing high-resolution conductive polymer nanowires in combination with nanoimprinting and plasma etching techniques without the need for high-resolution templates. Background technique [0002] Conductive polymers are not only a unique material that combines electrical, optical, and magnetic properties, but also have excellent mechanical processing properties, such as light weight, easy processing, and good bendability, so they have attracted widespread attention. However, traditional methods for fabricating surface conductive polymer patterns are difficult to combine high-resolution and low-cost methods. Therefore, it is an urgent need to design and implement a method that can combine the two. problem. [0003] Nanoimprinting is a low-cost, high-yield technique based on mechanically deforming barrier polymers at the nanoscale. Using ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00B81C1/00B82Y40/00
CPCH01B13/00B81C1/0046B82Y40/00
Inventor 石刚车友新李赢王大伟倪才华桑欣欣
Owner JIANGNAN UNIV